2011 International Reliability Physics Symposium最新文献_第7页

PBTI under dynamic stress: From a single defect point of view 动态应力下的PBTI:从单一缺陷的角度

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784502

K. Zhao, J. Stathis, B. Linder, E. Cartier, A. Kerber

{"title":"PBTI under dynamic stress: From a single defect point of view","authors":"K. Zhao, J. Stathis, B. Linder, E. Cartier, A. Kerber","doi":"10.1109/IRPS.2011.5784502","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784502","url":null,"abstract":"In this paper, fundamental aspects of the Bias Temperature Instability (BTI) in FETs with metal gate/high-k (HKMG) gate stacks are discussed from a single defect point of view. First, Random Telegraph Noise (RTN) measurements are used to show that the capture/emission processes of individual defects in highly scaled HKMG FETs exhibit very similar Poisson statistics and can be fully characterized by a characteristic electron/hole capture, τc, and emission time, τe, in NFET/PFET. In all cases, capture and emission are found to be thermally activated. These observations suggest that NBTI and PBTI share similar microscopic trapping/de-trapping mechanism, for holes and electrons, respectively. Based on these findings, a simple physical model is introduced which describes the behavior of a distribution of identical defects (characterized by τc and τe) but provides deep insights into the BTI dynamics under AC stress in general. The occupancy level of identical defects at equilibrium is found to becomes frequency, ƒ, independent for ƒ ≫ [1/τc, 1/τe], such that the BTI behavior at operation conditions (∼GHz) can be measured at relatively low frequencies (in the kHz range). The single defect model was then expanded to predict the macroscopic BTI behaviors in NMOS devices for arbitrary stress conditions. Excellent agreement between model prediction and experimental data is demonstrated, confirming that PBTI in HKMG gate stacks can be understood as a superposition of trapping/de-trapping events from individual defects in the gate stack. The overall dynamics of PBTI is thus largely governed by the distribution of electron capture and emission times of the defects in the gate stack. The challenges for using a capture and emission time based model for product lifetime predictions are addressed.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132733092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 45

The role of elastic and plastic anisotropy of Sn on microstructure and damage evolution in lead-free solder joints 锡的弹塑性各向异性对无铅焊点组织和损伤演变的影响

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784538

T. Bieler, Bite Zhou, L. Blair, A. Zamiri, P. Darbandi, F. Pourboghrat, Tae-Kyu Lee, K. Liu

{"title":"The role of elastic and plastic anisotropy of Sn on microstructure and damage evolution in lead-free solder joints","authors":"T. Bieler, Bite Zhou, L. Blair, A. Zamiri, P. Darbandi, F. Pourboghrat, Tae-Kyu Lee, K. Liu","doi":"10.1109/IRPS.2011.5784538","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784538","url":null,"abstract":"The elastic, thermal expansion, and plastic anisotropy of Sn is examined to assess how anisotropy affects the microstructural evolution and damage nucleation processes in SAC305 solder joints. Examination of all joints in a package indicates that upon solidification, crystal orientations are nearly randomly distributed. Initial studies of cracked joints after thermal cycling showed that orientations with the c-axis parallel to the joint interface (red orientations) are more likely to crack arising from tensile stresses during the hot part of the cycle. Subsequent studies show that package design has a large influence on how the microstructure evolves; higher strain designs stimulate recrystallization at earlier times. Recrystallization appears to be strongly correlated with crack nucleation and propagation processes, as red orientations often develop and lead to crack nucleation and propagation. The details of the recrystallization process depend strongly on the plastic slip and recovery processes arising from the specific crystal orientation / temperature / strain history that makes microstructural evolution of each joint unique. The unique history for each joint implies that worst case scenarios need to be identified and models developed that can predict microstructural evolution that leads to worst case scenarios.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"46 32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132976033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

An automated approach to isolate dominant SER susceptibilities in microcircuits 一种在微电路中分离显性SER敏感性的自动化方法

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784595

J. Castillo, D. Mavis, P. Eaton, M. Sibley, Donald Elkins, Rich Floyd

引用次数: 6

The effect of temperature on dielectric charging of capacitive MEMS 温度对电容式MEMS介电充电的影响

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784490

M. Koutsoureli, L. Michalas, G. Papaioannou

引用次数: 12

High reliable strain measurement for power devices using STEM-CBED method 基于STEM-CBED方法的电力器件高可靠应变测量

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784525

N. Nakanishi, H. Arie, H. Maeda, Y. Hirose, N. Hattori, T. Koyama, E. Murakami

{"title":"High reliable strain measurement for power devices using STEM-CBED method","authors":"N. Nakanishi, H. Arie, H. Maeda, Y. Hirose, N. Hattori, T. Koyama, E. Murakami","doi":"10.1109/IRPS.2011.5784525","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784525","url":null,"abstract":"Scanning transmission electron microscopy convergent beam electron diffraction (STEM-CBED) was applied to strain analysis of deep trench electrodes for devices such as power devices. Source-drain current leak, which was one of the crucial failures of this kind of structure, depends on boron concentration in boron doped poly-Si (BP) layers. TEM/STEM and diffraction analysis showed that the BP layers consist of epitaxial phase and poly-Si phase, and the proportion of these phases depends on the boron concentration in the BP layer. Clear strain distribution around the BP layers was obtained with STEM-CBED. This revealed that the origin of the strain is volume shrinkage of the epitaxial phase in the BP layer, and the poly-Si phase acts as buffer against this strain. Relationship between Si phases and boron concentration in the BP layers was examined with STEM and scanning capacitance microscopy. These analyses suggested that boron segregation occurred in samples having a higher boron concentration, and prevented epitaxial growth in the BP layers. As a result, the core of the BP layer remains as poly-Si or amorphous Si and acts as strain buffer. Our analysis concluded that boron concentration in the BP layer is one of the most important factors enabling high production yield for the structure.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129039323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effects of scaling on muon-induced soft errors 缩放对介子诱导软误差的影响

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784484

B. Sierawski, R. Reed, M. Mendenhall, R. Weller, peixiong zhao, S. Wen, R. Wong, N. Tam, R. Baumann

引用次数: 73

Transient latchup in power analog circuits 功率模拟电路中的暂态锁存

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784508

V. Vashchenko, D. LaFonteese, A. Concannon

引用次数: 1

Fast characterization of the Static Noise Margin degradation of cross-coupled inverters and correlation to BTI instabilities in MG/HK devices 交叉耦合逆变器静态噪声裕度退化的快速表征及其与MG/HK器件中BTI不稳定性的相关性

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784449

A. Kerber, N. Pimparkar, S. Balasubramanian, T. Nigam, W. McMahon, E. Cartier

引用次数: 3

Double-pulse-single-event transients in combinational logic 组合逻辑中的双脉冲单事件瞬变

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784486

J. Ahlbin, T. D. Loveless, Dennis R. Ball, Bharat L. Bhuva, A. Witulski, Lloyd W. Massengill, M. Gadlage

引用次数: 26

STI stress-induced degradation of data retention time in DRAM and a new characterizing method for mechanical stress 随机存取存储器中应力引起的数据保留时间退化及一种新的机械应力表征方法

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784458

T. Jang, Kyung-do Kim, Min-Soo Yoo, Yong-Taik Kim, S. Cha, Jae-Goan Jeong, Sung-Joo Hong

引用次数: 1