发布求助
文献互助 智能选刊 最新文献

2011 International Reliability Physics Symposium最新文献

筛选
英文 中文
Reliability monitoring ring oscillator structures for isolated/combined NBTI and PBTI measurement in high-k metal gate technologies 高k金属栅极技术中隔离/组合NBTI和PBTI测量的环振结构可靠性监测
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784450
Jae-Joon Kim, B. Linder, R. Rao, Tae-Hyoung Kim, P. Lu, K. Jenkins, C. Kim, A. Bansal, S. Mukhopadhyay, C. Chuang
{"title":"Reliability monitoring ring oscillator structures for isolated/combined NBTI and PBTI measurement in high-k metal gate technologies","authors":"Jae-Joon Kim, B. Linder, R. Rao, Tae-Hyoung Kim, P. Lu, K. Jenkins, C. Kim, A. Bansal, S. Mukhopadhyay, C. Chuang","doi":"10.1109/IRPS.2011.5784450","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784450","url":null,"abstract":"Ring oscillator (RO) structures that separate NBTI and PBTI effects are implemented in a high-k metal gate technology. The measurement results clearly show significant RO frequency degradation from PBTI as well as NBTI. For comparison, RO structures with the same principle are also implemented in a SiO2/poly-gate technology, where PBTI is negligible. Experimental results show noticeable frequency degradation under NBTI-only stress mode but negligible degradation under PBTI-only mode, which illustrates the validity of the proposed principle and structures.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125288256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Response of a single trap to AC negative Bias Temperature stress 单阱对交流负偏置温度应力的响应
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784501
M. Toledano-Luque, B. Kaczer, P. Roussel, T. Grasser, G. Wirth, J. Franco, C. Vrancken, N. Horiguchi, G. Groeseneken
{"title":"Response of a single trap to AC negative Bias Temperature stress","authors":"M. Toledano-Luque, B. Kaczer, P. Roussel, T. Grasser, G. Wirth, J. Franco, C. Vrancken, N. Horiguchi, G. Groeseneken","doi":"10.1109/IRPS.2011.5784501","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784501","url":null,"abstract":"We study the properties of a single gate oxide trap subjected to AC Bias Temperature Instability (BTI) stress conditions by means of Time Dependent Defect Spectroscopy. A theory for predicting the occupancy of a single trap after AC stress is developed based on first order kinetics and verified on experimental data. The developed theory can be used to develop circuit simulators and predict time dependent variability.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"204 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126079413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 69
A TDC-based test platform for dynamic circuit aging characterization 基于tdc的动态电路老化特性测试平台
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784448
Min Chen, V. Reddy, J. Carulli, S. Krishnan, V. Rentala, V. Srinivasan, Yu Cao
{"title":"A TDC-based test platform for dynamic circuit aging characterization","authors":"Min Chen, V. Reddy, J. Carulli, S. Krishnan, V. Rentala, V. Srinivasan, Yu Cao","doi":"10.1109/IRPS.2011.5784448","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784448","url":null,"abstract":"An on-chip 45nm test platform that directly monitors circuit performance degradation during dynamic operation is demonstrated. In contrast to traditional ring-oscillator (RO) based frequency measurements, it utilizes a Time-to-Digital Converter (TDC) with 2ps resolution to efficiently monitor circuit delay change on-the-fly. This new technique allows the capability of measuring signal edge degradation under various realistic circuit operating scenarios, such as asymmetric aging, dynamic voltage/frequency scaling, dynamic duty cycle factors, and temperature variations.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126393472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Investigation of the programming accuracy of a double-verify ISPP algorithm for nanoscale NAND Flash memories 纳米NAND闪存双验证ISPP算法的编程精度研究
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784588
C. Miccoli, C. Monzio Compagnoni, A. Spinelli, A. Lacaita
{"title":"Investigation of the programming accuracy of a double-verify ISPP algorithm for nanoscale NAND Flash memories","authors":"C. Miccoli, C. Monzio Compagnoni, A. Spinelli, A. Lacaita","doi":"10.1109/IRPS.2011.5784588","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784588","url":null,"abstract":"This paper presents a detailed investigation of the performance of a double-verify algorithm for accurate programming of deca-nanometer NAND Flash memories. In order to minimize the programmed threshold-voltage distribution width in presence of discrete and statistical electron injection, a weakened programming step is applied to cells if their threshold voltage falls between a low- and a high-program-verify level during incremental step pulse programming. Clear improvements are shown with respect to the single-verify case, with minimal burdens on programming time and complexity.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124190655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
A new interface defect spectroscopy method 一种新的界面缺陷光谱方法
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/VTSA.2011.5872242
J. Ryan, L. Yu, J. Han, J. Kopanski, K. Cheung, F. Zhang, C. Wang, J. Campbell, J. Suehle, V. Tilak, J. Fronheiser
{"title":"A new interface defect spectroscopy method","authors":"J. Ryan, L. Yu, J. Han, J. Kopanski, K. Cheung, F. Zhang, C. Wang, J. Campbell, J. Suehle, V. Tilak, J. Fronheiser","doi":"10.1109/VTSA.2011.5872242","DOIUrl":"https://doi.org/10.1109/VTSA.2011.5872242","url":null,"abstract":"A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of Si/SiO2 interface states. Additionally, we show that this is a powerful technique for studying other important material systems.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122203859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Comprehensive analysis of charge pumping data for trap identification 用于陷阱识别的电荷泵送数据综合分析
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784581
D. Veksler, G. Bersuker, A. Koudymov, C. Young, M. Liehr, B. Taylor
{"title":"Comprehensive analysis of charge pumping data for trap identification","authors":"D. Veksler, G. Bersuker, A. Koudymov, C. Young, M. Liehr, B. Taylor","doi":"10.1109/IRPS.2011.5784581","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784581","url":null,"abstract":"Analysis methodology for the charge pumping (CP) data, which considers non-elastic electron/hole capturing and releasing processes, is proposed. It is shown that the multi-phonon-assisted rearrangement of the dielectric lattice around the traps, associated with the charge trapping, is important for the interpretation of experimental results and needs to be taken into account. Analysis of the temperature dependent multi-frequency charge pumping data, measured on the MOSFETs with different thickness of the interfacial layer in the high-k dielectric gate stack, allowed to extract the trap energy and spatial profiles and helps to identify the nature of these traps.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128864374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Study of void formation kinetics in Cu interconnects using local sense structures 用局部感应结构研究铜互连中孔隙形成动力学
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784495
K. Croes, M. Lofrano, C. Wilson, L. Carbonell, Y. Siew, G. Beyer, Z. Tokei
{"title":"Study of void formation kinetics in Cu interconnects using local sense structures","authors":"K. Croes, M. Lofrano, C. Wilson, L. Carbonell, Y. Siew, G. Beyer, Z. Tokei","doi":"10.1109/IRPS.2011.5784495","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784495","url":null,"abstract":"A test structure that allows the study of void formation kinetics during electromigration is proposed and characterized. Compared to a standard single-via electromigration test structure voltage-senses are placed near the via. This allows monitoring resistance changes before final void formation, while the void formation process is not affected. Part of the samples show single void formation, while for other samples, multiple voids are formed. For the single void case, a model is proposed to calculate void-depth as a function of time. Initially, voids grow faster and this growth slows down towards the end of the void formation process. Estimated velocities during void formation are in the same order of magnitude compared to literature results of drift velocities during void growth. Cases where multiple voids are formed show that voids which initially form further away from the via stop growing upon formation of a void closer to the via.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133816048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Precise understanding of data retention mechanisms for MONOS memories: Toward simultaneous improvement of retention and endurance performances by SiN engineering 精确理解MONOS存储器的数据保留机制:通过SiN工程同时提高保留和持久性能
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784589
S. Fujii, R. Fujitsuka, K. Sekine, N. Yasuda
{"title":"Precise understanding of data retention mechanisms for MONOS memories: Toward simultaneous improvement of retention and endurance performances by SiN engineering","authors":"S. Fujii, R. Fujitsuka, K. Sekine, N. Yasuda","doi":"10.1109/IRPS.2011.5784589","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784589","url":null,"abstract":"We investigate the charge leakage path during data retention through the evaluation of its temperature dependence. As a result, it is experimentally demonstrated for the first time that the main leakage path of trapped charge changes depending on retention time. Furthermore, the direction of leakage path rather than trap energy profile in the SiN layer determines the temperature dependence of data retention characteristics. In addition, it is found that cycling degradation of data retention is due to increase in the charge loss through the tunnel layer. Based on the accurate understanding of data retention mechanisms, we show the possibility to achieve both of data retention and endurance improvements by SiN engineering.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114316054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A practical modeling for transient thermal characteristics of multilevel interconnects 多电平互连暂态热特性的实用建模
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784569
S. Choi, Dong-Cheon Baek, T. Jeong, M. Yeo, Miji Lee, A. Kim, Jongwoo Park
{"title":"A practical modeling for transient thermal characteristics of multilevel interconnects","authors":"S. Choi, Dong-Cheon Baek, T. Jeong, M. Yeo, Miji Lee, A. Kim, Jongwoo Park","doi":"10.1109/IRPS.2011.5784569","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784569","url":null,"abstract":"In this study, intuitive is given on time-dependent thermal characteristics in multilevel interconnects subjected to carry either DC or pulsed-DC. FEM simulation is employed to model the propensity of temperature profile with respect to the variety of interconnects having different geometrical features in terms of metal width, metal height and distance between metal and Si substrate. Accordingly, a practical model that enables to prognosis temperature increase resulting from current-driven metal interconnects and temperature decrease after current carried along metal line stops is developed. It is found that a proposed model precisely predicts thermal transient arisen from metal interconnect, regardless of geometrical factors of metal dimension and location. In addition, transient thermal behavior of metal interconnects carrying pulsed DC with various frequencies is investigated. A circuit designer is required to adjust the maximum allowable current carried along metal interconnects according to the frequency of pulsed DC as well as geometrical dimensions of metal interconnects. Hence, robustness in circuit design even in the earlier stage of development phase can be accomplished for metal interconnects by suppressing electromigration and rupture caused by thermal transient.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115024851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Rapid and automated grain orientation and grain boundary analysis in nanoscale copper interconnects 纳米级铜互连中快速、自动化的晶粒取向和晶界分析
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784524
K. Ganesh, S. Rajasekhara, D. Bultreys, P. Ferreira
{"title":"Rapid and automated grain orientation and grain boundary analysis in nanoscale copper interconnects","authors":"K. Ganesh, S. Rajasekhara, D. Bultreys, P. Ferreira","doi":"10.1109/IRPS.2011.5784524","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784524","url":null,"abstract":"A combination of diffraction scanning transmission electron microscopy (D-STEM) and automated precession microscopy is used to obtain orientation information from 108 copper grains in 120 nm wide copper interconnect lines. Grain boundary analysis based on this orientation data reveals that Σ3n (n = 1, 2) boundaries are predominant in these lines. Finite element analysis reveals regions of high and low stresses within the copper microstructure.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"247 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134462327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信