Comprehensive analysis of charge pumping data for trap identification

Abstract

Analysis methodology for the charge pumping (CP) data, which considers non-elastic electron/hole capturing and releasing processes, is proposed. It is shown that the multi-phonon-assisted rearrangement of the dielectric lattice around the traps, associated with the charge trapping, is important for the interpretation of experimental results and needs to be taken into account. Analysis of the temperature dependent multi-frequency charge pumping data, measured on the MOSFETs with different thickness of the interfacial layer in the high-k dielectric gate stack, allowed to extract the trap energy and spatial profiles and helps to identify the nature of these traps.