纳米级铜互连中快速、自动化的晶粒取向和晶界分析

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI:10.1109/IRPS.2011.5784524

K. Ganesh, S. Rajasekhara, D. Bultreys, P. Ferreira

{"title":"纳米级铜互连中快速、自动化的晶粒取向和晶界分析","authors":"K. Ganesh, S. Rajasekhara, D. Bultreys, P. Ferreira","doi":"10.1109/IRPS.2011.5784524","DOIUrl":null,"url":null,"abstract":"A combination of diffraction scanning transmission electron microscopy (D-STEM) and automated precession microscopy is used to obtain orientation information from 108 copper grains in 120 nm wide copper interconnect lines. Grain boundary analysis based on this orientation data reveals that Σ3n (n = 1, 2) boundaries are predominant in these lines. Finite element analysis reveals regions of high and low stresses within the copper microstructure.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"247 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Rapid and automated grain orientation and grain boundary analysis in nanoscale copper interconnects\",\"authors\":\"K. Ganesh, S. Rajasekhara, D. Bultreys, P. Ferreira\",\"doi\":\"10.1109/IRPS.2011.5784524\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A combination of diffraction scanning transmission electron microscopy (D-STEM) and automated precession microscopy is used to obtain orientation information from 108 copper grains in 120 nm wide copper interconnect lines. Grain boundary analysis based on this orientation data reveals that Σ3n (n = 1, 2) boundaries are predominant in these lines. Finite element analysis reveals regions of high and low stresses within the copper microstructure.\",\"PeriodicalId\":242672,\"journal\":{\"name\":\"2011 International Reliability Physics Symposium\",\"volume\":\"247 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-04-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2011.5784524\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2011.5784524","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

采用衍射扫描透射电子显微镜(D-STEM)和自动进动显微镜相结合的方法，在120 nm宽的铜互连线上获得108个铜晶粒的取向信息。基于取向数据的晶界分析表明，Σ3n (n = 1,2)晶界在这些线中占主导地位。有限元分析揭示了铜微观结构中的高应力和低应力区域。

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Rapid and automated grain orientation and grain boundary analysis in nanoscale copper interconnects

A combination of diffraction scanning transmission electron microscopy (D-STEM) and automated precession microscopy is used to obtain orientation information from 108 copper grains in 120 nm wide copper interconnect lines. Grain boundary analysis based on this orientation data reveals that Σ3n (n = 1, 2) boundaries are predominant in these lines. Finite element analysis reveals regions of high and low stresses within the copper microstructure.

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2011 International Reliability Physics Symposium

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