J. Ryan, L. Yu, J. Han, J. Kopanski, K. Cheung, F. Zhang, C. Wang, J. Campbell, J. Suehle, V. Tilak, J. Fronheiser
{"title":"一种新的界面缺陷光谱方法","authors":"J. Ryan, L. Yu, J. Han, J. Kopanski, K. Cheung, F. Zhang, C. Wang, J. Campbell, J. Suehle, V. Tilak, J. Fronheiser","doi":"10.1109/VTSA.2011.5872242","DOIUrl":null,"url":null,"abstract":"A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of Si/SiO2 interface states. Additionally, we show that this is a powerful technique for studying other important material systems.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A new interface defect spectroscopy method\",\"authors\":\"J. Ryan, L. Yu, J. Han, J. Kopanski, K. Cheung, F. Zhang, C. Wang, J. Campbell, J. Suehle, V. Tilak, J. Fronheiser\",\"doi\":\"10.1109/VTSA.2011.5872242\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of Si/SiO2 interface states. Additionally, we show that this is a powerful technique for studying other important material systems.\",\"PeriodicalId\":242672,\"journal\":{\"name\":\"2011 International Reliability Physics Symposium\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-04-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTSA.2011.5872242\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2011.5872242","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of Si/SiO2 interface states. Additionally, we show that this is a powerful technique for studying other important material systems.
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