B. Sierawski, R. Reed, M. Mendenhall, R. Weller, peixiong zhao, S. Wen, R. Wong, N. Tam, R. Baumann
{"title":"缩放对介子诱导软误差的影响","authors":"B. Sierawski, R. Reed, M. Mendenhall, R. Weller, peixiong zhao, S. Wen, R. Wong, N. Tam, R. Baumann","doi":"10.1109/IRPS.2011.5784484","DOIUrl":null,"url":null,"abstract":"Experimental results are presented that indicate technology scaling increases the sensitivity of microelectronics to soft errors from low-energy muons. Results are presented for 65, 55, 45, and 40 nm bulk CMOS SRAM test arrays. Simulations suggest an increasing role of muons in the soft error rate for smaller technologies.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"73","resultStr":"{\"title\":\"Effects of scaling on muon-induced soft errors\",\"authors\":\"B. Sierawski, R. Reed, M. Mendenhall, R. Weller, peixiong zhao, S. Wen, R. Wong, N. Tam, R. Baumann\",\"doi\":\"10.1109/IRPS.2011.5784484\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Experimental results are presented that indicate technology scaling increases the sensitivity of microelectronics to soft errors from low-energy muons. Results are presented for 65, 55, 45, and 40 nm bulk CMOS SRAM test arrays. Simulations suggest an increasing role of muons in the soft error rate for smaller technologies.\",\"PeriodicalId\":242672,\"journal\":{\"name\":\"2011 International Reliability Physics Symposium\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-04-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"73\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2011.5784484\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2011.5784484","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Experimental results are presented that indicate technology scaling increases the sensitivity of microelectronics to soft errors from low-energy muons. Results are presented for 65, 55, 45, and 40 nm bulk CMOS SRAM test arrays. Simulations suggest an increasing role of muons in the soft error rate for smaller technologies.
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