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2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)最新文献

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Controlling strain in suspended Nanomaterials 悬浮纳米材料的应变控制
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154704
S. Hermann, Simon Böttger, J. Albrecht
{"title":"Controlling strain in suspended Nanomaterials","authors":"S. Hermann, Simon Böttger, J. Albrecht","doi":"10.1109/IITC/MAM57687.2023.10154704","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154704","url":null,"abstract":"The use of nanomaterials in emerging electronics and sensor technologies is becoming more prevalent due to their unique properties. However, controlling the strain states of these materials in nanodevices remains a persistent challenge. Incorporating mechanical strain in a controllable manner is crucial and is simplified here for suspended nanomaterial assemblies in nano-electro-mechanical system (NEMS) configurations. We discuss a verified CMOS compatible and scalable surface micromachining approach with respect to design capabilities based on FE simulations. It is shown that in-plane stress applicable in multi-axial directions can be controlled by only a few geometry factors and by process parameters of strain mediating stress layers.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123005522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
BEoL-integrated ferroelectric RAM for advanced semiconductor technology nodes 用于先进半导体技术节点的beol集成铁电RAM
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154837
S. Mueller
{"title":"BEoL-integrated ferroelectric RAM for advanced semiconductor technology nodes","authors":"S. Mueller","doi":"10.1109/IITC/MAM57687.2023.10154837","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154837","url":null,"abstract":"Ferroelectric memory technology has again moved into the focus of academic and industrial R&D due to the discovery of ferroelectricity in HfO2. This paper gives an overview of FRAM-type as well as FeFET-type memory cells with particular focus on integrating ferroelectric capacitors (FeCAPs) in the Back-End-of-Line (BEoL) of a semiconductor manufacturing process. For FRAM memory cells, different capacitor types and integration schemes are described as well as considerations for access transistors and high-density implementations are discussed. For FeFET memory cells, advanced node floating gate memory cells with BEoL integrated FeCAPs are presented, and also back-gate approaches are reviewed.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123518962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CuAl intermetallic compound for Cu alternative 铜金属间化合物的Cu替代品
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154850
T. Kuge, M. Yahagi, J. Koike
{"title":"CuAl intermetallic compound for Cu alternative","authors":"T. Kuge, M. Yahagi, J. Koike","doi":"10.1109/IITC/MAM57687.2023.10154850","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154850","url":null,"abstract":"In this paper, we report the properties and reliability of CuAl as a candidate for new interconnect materials. The tape test results for CuAl showed good adhesion to th-SiO2, and the BTS (3 MV/cm, 30 min, 250°C) test results confirmed that CuAl has high BTS reliability. In terms of resistivity, CuAl was shown to have lower resistivity than Cu including a liner/barrier layer, at less than 6 nm. No voids were observed after EM (1 MA/cm2, 275 °C, 25 h) test, whereas voids were observed in Cu/TaN. The results of this study indicate that CuAl is a promising candidate as a new interconnect material that does not require a liner/barrier layer.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131117742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical high-resolution image-based defect inspection on compound semiconductors 基于光学高分辨率图像的化合物半导体缺陷检测
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154802
Thomas Trautzsch, A. Mapelli, Timm Berndorfer, Christian Czogalla, Christoph Pfuhl
{"title":"Optical high-resolution image-based defect inspection on compound semiconductors","authors":"Thomas Trautzsch, A. Mapelli, Timm Berndorfer, Christian Czogalla, Christoph Pfuhl","doi":"10.1109/IITC/MAM57687.2023.10154802","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154802","url":null,"abstract":"With the increase in volume and demand for smaller, faster, and more power-efficient integrated circuits, compound semiconductors have gained significant importance over silicon. In this paper, the authors intend to describe a novel implemented solution based on high-resolution images obtained with an automated optical inspection (AOI) system, combined with an artificial intelligence-based approach to identify, and classify defects for the purpose of a stable monitoring of the processing of compound semiconductors.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121183227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In situ Post Etch Treatment on Ge-rich GST after etching in HBr-based plasma hbr基等离子体刻蚀后富锗GST的原位刻蚀后处理
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154885
C. Boixaderas, Y. Canvel, B. Fontaine, S. Lagrasta, J. Dubois, P. Gouraud, N. Possémé, E. Martinez
{"title":"In situ Post Etch Treatment on Ge-rich GST after etching in HBr-based plasma","authors":"C. Boixaderas, Y. Canvel, B. Fontaine, S. Lagrasta, J. Dubois, P. Gouraud, N. Possémé, E. Martinez","doi":"10.1109/IITC/MAM57687.2023.10154885","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154885","url":null,"abstract":"After patterning of Phase Change Memory (PCM) stack, residues are growing after etching and air exposure. This kind of defect might lead to severe impacts on the devices performances and reliability. In this work, we study the modification of the Ge-GST surface after HBr-based plasma etching and air exposure. We evaluated the CH4-based in situ post etch plasma treatments as a solution to protect Ge-GST and prevent the formation of residues.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126895056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Semimetallic Atomic Layer Deposited TiS2 Thin Films for Contact Resistance Improvement of MoS2-based Thin Film Transistor 半金属原子层沉积TiS2薄膜改善mos2基薄膜晶体管的接触电阻
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154841
Hwi Yoon, Jeongwook Seo, Sangyoon Lee, Jisang Yoo, Yunyong Nam, Jun Hyung Lim, Seung-min Chung, Hyungjun Kim
{"title":"Semimetallic Atomic Layer Deposited TiS2 Thin Films for Contact Resistance Improvement of MoS2-based Thin Film Transistor","authors":"Hwi Yoon, Jeongwook Seo, Sangyoon Lee, Jisang Yoo, Yunyong Nam, Jun Hyung Lim, Seung-min Chung, Hyungjun Kim","doi":"10.1109/IITC/MAM57687.2023.10154841","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154841","url":null,"abstract":"We introduced atomic layer deposition (ALD) of TiS<inf>2</inf> as contact layer for MoS<inf>2</inf> TFT to reduce the contact resistance. In this study, film properties of low temperature ALD TiS<inf>2</inf> according to growth temperature was analyzed. ALD grown TiS<inf>2</inf> showed semimetallic nature with low resistivity. In addition, change in properties of MoS<inf>2</inf> after TiS<inf>2</inf> deposition was investigated by various method. By applying ALD TiS<inf>2</inf>, we found significant increase in current level and V<inf>th</inf> reduction which are attributed to semimetal nature of TiS<inf>2</inf>. These results imply that ALD TiS<inf>2</inf> for contact formation is proper method to achieve high performance of MoS<inf>2</inf> TFT.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"15 12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127656435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Schottky barrier height and contact resistivity reduction of metal/GaOx/n-GaN structure 金属/GaOx/n-GaN结构的肖特基势垒高度和接触电阻率降低
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154793
J. Koba, J. Koike
{"title":"Schottky barrier height and contact resistivity reduction of metal/GaOx/n-GaN structure","authors":"J. Koba, J. Koike","doi":"10.1109/IITC/MAM57687.2023.10154793","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154793","url":null,"abstract":"The purpose of this paper is to obtain the low contact resistivity on n-GaN. We adopted metal-insulator-semiconductor (MIS) contact for relaxing Fermi level pinning. Especially, in the case of thermally grown GaOx for insulator and Mg30nm/Al 220nm for metal, we obtained the contact resistivity as small as 3.7×10−7 Ω·cm2 on n-GaN having Si doping concentration of 2 × 1018 cm−3. The low contact resistivity was made possible by lowering the Schottky barrier height by the presence of the thin GaOx insulator at metal/n-GaN interface.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121198434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comprehensive Bath Monitoring of Ruthenium Wet Deposition and Etching Processes 钌湿沉积和蚀刻工艺的综合镀液监测
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154887
Jingjing Wang, Patrick Saitta, E. Shalyt
{"title":"Comprehensive Bath Monitoring of Ruthenium Wet Deposition and Etching Processes","authors":"Jingjing Wang, Patrick Saitta, E. Shalyt","doi":"10.1109/IITC/MAM57687.2023.10154887","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154887","url":null,"abstract":"The semiconductor industry has mostly employed dry processes for Ru thin layer deposition and etching. Cost effective wet approaches remain limited for high volume production. One of the obstacles is the precise process control of the sophisticated solutions. In this report, typical electroless deposition and etching of ruthenium processes were analyzed by various techniques, including real-time UVVIS, near-infrared, Raman spectroscopy, reagent spectrophotometry, and inductively coupled plasma optical emission spectroscopy. Corresponding methods were developed for automatic and comprehensive characterization of every component without interreferences from the solution matrix or by-products in the process.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129025888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Calibrated fast thermal calculation and experimental characterization of advanced BEOL stacks 先进BEOL堆的校准快速热计算和实验表征
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154768
Xinyue Chang, H. Oprins, M. Lofrano, V. Cherman, B. Vermeersch, Javier Diaz Fortuny, Seongho Park, Z. Tokei, I. De Wolf
{"title":"Calibrated fast thermal calculation and experimental characterization of advanced BEOL stacks","authors":"Xinyue Chang, H. Oprins, M. Lofrano, V. Cherman, B. Vermeersch, Javier Diaz Fortuny, Seongho Park, Z. Tokei, I. De Wolf","doi":"10.1109/IITC/MAM57687.2023.10154768","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154768","url":null,"abstract":"In this work, we present a fast evaluation methodology to aid the thermal-aware BEOL design with a quick estimation of out-of-plane layer equivalent thermal properties based on design rules for dimensions and densities. The method is calibrated with a detailed FE thermal simulation and is applicable to realistic back-end-of-line (BEOL) connectivity. With this method, a breakdown analysis is performed on an advanced 3 nm 14-layer BEOL stack. Thermal contributions of individual layers and impacts of dielectric and metallization choices are benchmarked. Furthermore, a dedicated multi-layer BEOL test vehicle is designed in a 28nm foundry CMOS technology. The out-of-plane thermal coupling is experimentally characterized, and consistent measurement and modeling results are obtained.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129349024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A novel integration scheme for self-aligend Ru topvia as post-Cu alternative metal interconnects 一种新型自对准Ru topvia作为后cu替代金属互连的集成方案
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154842
K. Motoyama, D. Metzler, C. Park, N. Lanzillo, L. Zou, S. Ghosh, K. Choi
{"title":"A novel integration scheme for self-aligend Ru topvia as post-Cu alternative metal interconnects","authors":"K. Motoyama, D. Metzler, C. Park, N. Lanzillo, L. Zou, S. Ghosh, K. Choi","doi":"10.1109/IITC/MAM57687.2023.10154842","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154842","url":null,"abstract":"A novel integration process for self-aligned topvia Ru interconnects has been demonstrated, where lines are patterned through a subtractive scheme and vias are formed through a damascene scheme. TiN spacer has been utilized for improved etch selectivity to ensure self-aligned via patterning. Topvia structure should have a great advantage in increasing the percentage of lines with airgap and simulation results support that a significant reduction in capacitance can be achieved by incorporating airgaps in Ru topvia interconnects.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127240741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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