Semimetallic Atomic Layer Deposited TiS2 Thin Films for Contact Resistance Improvement of MoS2-based Thin Film Transistor

Abstract

We introduced atomic layer deposition (ALD) of TiS2 as contact layer for MoS2 TFT to reduce the contact resistance. In this study, film properties of low temperature ALD TiS2 according to growth temperature was analyzed. ALD grown TiS2 showed semimetallic nature with low resistivity. In addition, change in properties of MoS2 after TiS2 deposition was investigated by various method. By applying ALD TiS2, we found significant increase in current level and Vth reduction which are attributed to semimetal nature of TiS2. These results imply that ALD TiS2 for contact formation is proper method to achieve high performance of MoS2 TFT.