{"title":"铜金属间化合物的Cu替代品","authors":"T. Kuge, M. Yahagi, J. Koike","doi":"10.1109/IITC/MAM57687.2023.10154850","DOIUrl":null,"url":null,"abstract":"In this paper, we report the properties and reliability of CuAl as a candidate for new interconnect materials. The tape test results for CuAl showed good adhesion to th-SiO2, and the BTS (3 MV/cm, 30 min, 250°C) test results confirmed that CuAl has high BTS reliability. In terms of resistivity, CuAl was shown to have lower resistivity than Cu including a liner/barrier layer, at less than 6 nm. No voids were observed after EM (1 MA/cm2, 275 °C, 25 h) test, whereas voids were observed in Cu/TaN. The results of this study indicate that CuAl is a promising candidate as a new interconnect material that does not require a liner/barrier layer.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CuAl intermetallic compound for Cu alternative\",\"authors\":\"T. Kuge, M. Yahagi, J. Koike\",\"doi\":\"10.1109/IITC/MAM57687.2023.10154850\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report the properties and reliability of CuAl as a candidate for new interconnect materials. The tape test results for CuAl showed good adhesion to th-SiO2, and the BTS (3 MV/cm, 30 min, 250°C) test results confirmed that CuAl has high BTS reliability. In terms of resistivity, CuAl was shown to have lower resistivity than Cu including a liner/barrier layer, at less than 6 nm. No voids were observed after EM (1 MA/cm2, 275 °C, 25 h) test, whereas voids were observed in Cu/TaN. The results of this study indicate that CuAl is a promising candidate as a new interconnect material that does not require a liner/barrier layer.\",\"PeriodicalId\":241835,\"journal\":{\"name\":\"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC/MAM57687.2023.10154850\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC/MAM57687.2023.10154850","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper, we report the properties and reliability of CuAl as a candidate for new interconnect materials. The tape test results for CuAl showed good adhesion to th-SiO2, and the BTS (3 MV/cm, 30 min, 250°C) test results confirmed that CuAl has high BTS reliability. In terms of resistivity, CuAl was shown to have lower resistivity than Cu including a liner/barrier layer, at less than 6 nm. No voids were observed after EM (1 MA/cm2, 275 °C, 25 h) test, whereas voids were observed in Cu/TaN. The results of this study indicate that CuAl is a promising candidate as a new interconnect material that does not require a liner/barrier layer.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
