一种新型自对准Ru topvia作为后cu替代金属互连的集成方案

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI:10.1109/IITC/MAM57687.2023.10154842

K. Motoyama, D. Metzler, C. Park, N. Lanzillo, L. Zou, S. Ghosh, K. Choi

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引用次数: 0

摘要

已经证明了一种新的自对齐topvia Ru互连的集成过程，其中通过减法方案形成线条，通过大马士革方案形成过孔。TiN间隔剂已被用于提高蚀刻选择性，以确保通过图片化自对准。Topvia结构在增加气隙线路百分比方面应该具有很大的优势，仿真结果支持通过在Ru Topvia互连中加入气隙可以显著降低电容。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A novel integration scheme for self-aligend Ru topvia as post-Cu alternative metal interconnects

A novel integration process for self-aligned topvia Ru interconnects has been demonstrated, where lines are patterned through a subtractive scheme and vias are formed through a damascene scheme. TiN spacer has been utilized for improved etch selectivity to ensure self-aligned via patterning. Topvia structure should have a great advantage in increasing the percentage of lines with airgap and simulation results support that a significant reduction in capacitance can be achieved by incorporating airgaps in Ru topvia interconnects.

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来源期刊

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)

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