C. Boixaderas, Y. Canvel, B. Fontaine, S. Lagrasta, J. Dubois, P. Gouraud, N. Possémé, E. Martinez
{"title":"hbr基等离子体刻蚀后富锗GST的原位刻蚀后处理","authors":"C. Boixaderas, Y. Canvel, B. Fontaine, S. Lagrasta, J. Dubois, P. Gouraud, N. Possémé, E. Martinez","doi":"10.1109/IITC/MAM57687.2023.10154885","DOIUrl":null,"url":null,"abstract":"After patterning of Phase Change Memory (PCM) stack, residues are growing after etching and air exposure. This kind of defect might lead to severe impacts on the devices performances and reliability. In this work, we study the modification of the Ge-GST surface after HBr-based plasma etching and air exposure. We evaluated the CH4-based in situ post etch plasma treatments as a solution to protect Ge-GST and prevent the formation of residues.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"In situ Post Etch Treatment on Ge-rich GST after etching in HBr-based plasma\",\"authors\":\"C. Boixaderas, Y. Canvel, B. Fontaine, S. Lagrasta, J. Dubois, P. Gouraud, N. Possémé, E. Martinez\",\"doi\":\"10.1109/IITC/MAM57687.2023.10154885\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"After patterning of Phase Change Memory (PCM) stack, residues are growing after etching and air exposure. This kind of defect might lead to severe impacts on the devices performances and reliability. In this work, we study the modification of the Ge-GST surface after HBr-based plasma etching and air exposure. We evaluated the CH4-based in situ post etch plasma treatments as a solution to protect Ge-GST and prevent the formation of residues.\",\"PeriodicalId\":241835,\"journal\":{\"name\":\"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)\",\"volume\":\"98 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC/MAM57687.2023.10154885\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC/MAM57687.2023.10154885","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In situ Post Etch Treatment on Ge-rich GST after etching in HBr-based plasma
After patterning of Phase Change Memory (PCM) stack, residues are growing after etching and air exposure. This kind of defect might lead to severe impacts on the devices performances and reliability. In this work, we study the modification of the Ge-GST surface after HBr-based plasma etching and air exposure. We evaluated the CH4-based in situ post etch plasma treatments as a solution to protect Ge-GST and prevent the formation of residues.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
