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2014 IEEE Radiation Effects Data Workshop (REDW)最新文献

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Investigation of the Cosine Law for Lateral Power MOSFETs 横向功率mosfet余弦定律的研究
2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI: 10.1109/REDW.2014.7004575
L. Scheick, L. Edmonds
{"title":"Investigation of the Cosine Law for Lateral Power MOSFETs","authors":"L. Scheick, L. Edmonds","doi":"10.1109/REDW.2014.7004575","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004575","url":null,"abstract":"The results of recent Single Event Effect (SEE) testing of newly available power MOSFETs are presented.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115163360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced Low Dose Rate Sensitivity Analysis 增强的低剂量率敏感性分析
2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI: 10.1109/REDW.2014.7004568
David Nunez, M. Poizat, J. Jimenez, E. Muñoz, M. Domínguez
{"title":"Enhanced Low Dose Rate Sensitivity Analysis","authors":"David Nunez, M. Poizat, J. Jimenez, E. Muñoz, M. Domínguez","doi":"10.1109/REDW.2014.7004568","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004568","url":null,"abstract":"During a series of experiments, different components manufactured on bipolar technology have been irradiated at two different dose rates (36 rd(Si)/h and 360rd(Si)/h) and on two biasing conditions (ON/OFF). With the aim of identifying different factors of degradation, a set of different functions included on almost every space system has been considered. Different manufacturers and technologies have also been selected to ensure the widest possible set of data. The results obtained are not showing a significant dose rate dependency on some items although it has been detected that for several bipolar part types the worst test conditions is systematically considered under 36rd(Si)/h dose rate.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116857596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Accelerator-Based Neutron Irradiation of Integrated Circuits at GENEPI2 (France) 法国GENEPI2集成电路加速器中子辐照研究
2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI: 10.1109/REDW.2014.7004511
F. Villa, M. Baylac, S. Rey, O. Rossetto, W. Mansour, P. Ramos, R. Velazco, G. Hubert
{"title":"Accelerator-Based Neutron Irradiation of Integrated Circuits at GENEPI2 (France)","authors":"F. Villa, M. Baylac, S. Rey, O. Rossetto, W. Mansour, P. Ramos, R. Velazco, G. Hubert","doi":"10.1109/REDW.2014.7004511","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004511","url":null,"abstract":"GENEPI2 is an accelerator facility located in Grenoble (France) which can provide neutrons of 3 MeV or 15 MeV. Preliminary irradiation of SRAMs showed results compatible with those issued from other facilities.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115748920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
Design and Radiation Hardness of Next Generation Solar UV Radiometers 新一代太阳紫外线辐射计的设计与辐射硬度
2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI: 10.1109/REDW.2014.7004563
S. Gissot, A. BenMoussa, B. Giordanengo, A. Soltani, Terubumi Saito, U. Schuhle, U. Kroth, A. Gottwald
{"title":"Design and Radiation Hardness of Next Generation Solar UV Radiometers","authors":"S. Gissot, A. BenMoussa, B. Giordanengo, A. Soltani, Terubumi Saito, U. Schuhle, U. Kroth, A. Gottwald","doi":"10.1109/REDW.2014.7004563","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004563","url":null,"abstract":"For next space-based ultraviolet (UV) solar radiometers, we propose a design based on subsystem components that are selected according to lessons learned from previous flying missions and ground irradiation campaigns. UV interference filters inherited from space-based solar missions show strong degradation caused by structural changes that lead to an important decrease of visible light rejection. Wide bandgap semiconductors (WBGS) are used for the photodetectors: innovative metal-semiconductor-metal (MSM) based on Aluminum Nitride (AlN) and Diamond-based PIN photodetectors were developed, characterized and compared to the commonly used silicon photodiode technology (AXUV and SXUV types). Insignificant degradation of the WBGS based-photodetector performances were observed after exposure to protons of 14.4 MeV energy showing a good radiation tolerance up to fluences of 1x10^11 p+/cm2. Onboard calibration strategy based on UV LEDs are used as well to distinguish the detector's drift from inevitable degradations of the optical front filters.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131944216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Compendium of Single-Event Latchup and Total Ionizing Dose Test Results of Commercial and Radiation Tolerant Operational Amplifiers 商业和辐射耐受运算放大器的单事件闭锁和总电离剂量试验结果汇编
2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI: 10.1109/REDW.2014.7004561
F. Irom, S. Agarwal, Mehran Amrbar
{"title":"Compendium of Single-Event Latchup and Total Ionizing Dose Test Results of Commercial and Radiation Tolerant Operational Amplifiers","authors":"F. Irom, S. Agarwal, Mehran Amrbar","doi":"10.1109/REDW.2014.7004561","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004561","url":null,"abstract":"This compendium reports on single-event latchup and total ionizing dose results for a variety of operational amplifiers targeted for possible use in NASA spacecraft. It covers devices tested over the last 15 years.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132389186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Low Energy Protons at RADEF - Application to Advanced eSRAMs RADEF中的低能质子-在先进esram中的应用
2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI: 10.1109/REDW.2014.7004577
H. Kettunen, V. Ferlet-Cavrois, P. Roche, M. Rossi, A. Bosser, G. Gasiot, F. Guerre, J. Jaatinen, A. Javanainen, F. Lochon, A. Virtanen
{"title":"Low Energy Protons at RADEF - Application to Advanced eSRAMs","authors":"H. Kettunen, V. Ferlet-Cavrois, P. Roche, M. Rossi, A. Bosser, G. Gasiot, F. Guerre, J. Jaatinen, A. Javanainen, F. Lochon, A. Virtanen","doi":"10.1109/REDW.2014.7004577","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004577","url":null,"abstract":"A low energy proton facility has been developed at RADEF, Jyv̈skyl̈, Finland. The proton energy selection, calibration and dosimetry are described. The first experiment with external users was performed using two memory test vehicles fabricated with 28 nm technology. Examples of single event upset measurements in the test vehicles embedded SRAMs (eSRAMs) as a function of proton energy are provided.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125116039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Simulation of Single Event Effects and Rate Prediction: CODES an ESA Tool 单事件效应模拟和速率预测:ESA工具代码
2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI: 10.1109/REDW.2014.7004590
A. Keating, S. Coutinho, Patricia Goncalves, A. Zadeh, Mário Pimenta, E. Daly, Joao Martins
{"title":"Simulation of Single Event Effects and Rate Prediction: CODES an ESA Tool","authors":"A. Keating, S. Coutinho, Patricia Goncalves, A. Zadeh, Mário Pimenta, E. Daly, Joao Martins","doi":"10.1109/REDW.2014.7004590","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004590","url":null,"abstract":"CODES is an ESA GEANT4 based top level engineering tool, to predict Single Event Effects in EEE devices. It consists of different GEANT4 modules with a user friendly web-based interface. The different modules comprise device geometry definition (including packaging and shielding), device sensitivity interpretation based on experimental test data and data analysis. CODES performance and inter-modular communication is assured by a pre-processor. CODES web interface is deployed in a PHP server. CODES perform full simulation of device sensitivity and final rate prediction. CODES validation results have revealed its excellent performance as an engineering tool.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116634568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Floating Gate P-MOS Radiation Sensor Charging Cycles Characterization 浮栅P-MOS辐射传感器充电周期表征
2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI: 10.1109/REDW.2014.7004572
J. Cesari, D. Gomez, M. Roca, E. Isern, Á. Pineda, E. García-Moreno
{"title":"Floating Gate P-MOS Radiation Sensor Charging Cycles Characterization","authors":"J. Cesari, D. Gomez, M. Roca, E. Isern, Á. Pineda, E. García-Moreno","doi":"10.1109/REDW.2014.7004572","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004572","url":null,"abstract":"A recharging cycles characterization of a floating Gate PMOS radiation sensor is presented. The radiation sensor with an extra circuitry to emulate the radiation environment in order to discharge the floating gate has been tested using an automated measurement system. The sensor performance and reliability is analyzed after those tests.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128515970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
The New Gamma Irradiation Facility at the National Research Nuclear University MEPhI 国家核研究大学MEPhI的新伽马辐射设施
2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI: 10.1109/REDW.2014.7004600
A. Artamonov, A. Sangalov, A. Nikiforov, V. Telets, D. Boychenko
{"title":"The New Gamma Irradiation Facility at the National Research Nuclear University MEPhI","authors":"A. Artamonov, A. Sangalov, A. Nikiforov, V. Telets, D. Boychenko","doi":"10.1109/REDW.2014.7004600","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004600","url":null,"abstract":"The new gamma irradiation facility recently installed at the National Research Nuclear University MEPhI (Moscow, Russia) is presented.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128844120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
SEE Test Results for P2020 and P5020 Freescale Processors 飞思卡尔P2020和P5020处理器的SEE测试结果
2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI: 10.1109/REDW.2014.7004587
S. Guertin, Mehran Amrbar
{"title":"SEE Test Results for P2020 and P5020 Freescale Processors","authors":"S. Guertin, Mehran Amrbar","doi":"10.1109/REDW.2014.7004587","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004587","url":null,"abstract":"Freescale processors are tested for heavy ion and proton SEE. The P2020 is tested for cache and register bit upsets as well as for upsets of various algorithms and memory controller upsets. The P5020 is tested for cache and register bit upsets as well as memory controller upsets. Effectiveness of testing various algorithms is limited to proton testing of the P2020 and is generally limited in fidelity due to register and cache upsets.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122056988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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