RADEF中的低能质子-在先进esram中的应用

2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI:10.1109/REDW.2014.7004577

H. Kettunen, V. Ferlet-Cavrois, P. Roche, M. Rossi, A. Bosser, G. Gasiot, F. Guerre, J. Jaatinen, A. Javanainen, F. Lochon, A. Virtanen

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引用次数: 18

摘要

在芬兰Jyv skyl RADEF开发了一个低能质子设施。介绍了质子能量的选择、校准和剂量测定。第一个外部用户实验是用两个28纳米技术制造的存储器测试车进行的。给出了嵌入sram (eSRAMs)的测试车辆中单个事件扰动测量作为质子能量函数的例子。

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Low Energy Protons at RADEF - Application to Advanced eSRAMs

A low energy proton facility has been developed at RADEF, Jyv̈skyl̈, Finland. The proton energy selection, calibration and dosimetry are described. The first experiment with external users was performed using two memory test vehicles fabricated with 28 nm technology. Examples of single event upset measurements in the test vehicles embedded SRAMs (eSRAMs) as a function of proton energy are provided.

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来源期刊

2014 IEEE Radiation Effects Data Workshop (REDW)

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