{"title":"Single Event Effects in Power MOSFETs and IGBTs Due to 14 MeV and 25 meV Neutrons","authors":"D. Lambert, F. Desnoyers, D. Thouvenot, B. Azais","doi":"10.1109/REDW.2014.7004592","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004592","url":null,"abstract":"Single Event Effect (SEE) characterizations under 14 MeV and 25 meV neutrons are presented for various commercial power electronic components: power metal-oxide-semiconductor field effect transistors (MOSFET) and insulated gate bipolar transistors (IGBT).","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124258566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Gomaa, I. Adly, K. Sharshar, A. Safwat, H. Ragai
{"title":"Radiation Tolerance Assessment of Commercial ZigBee Wireless Modules","authors":"R. Gomaa, I. Adly, K. Sharshar, A. Safwat, H. Ragai","doi":"10.1109/REDW.2014.7004584","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004584","url":null,"abstract":"WSN deployment for monitoring nuclear environment has recently addressed as incremental and experimental networks. The work objective is to determine dose tolerance of commercially wireless Zigbee modules in nuclear embedded applications, with gamma irradiation fluxes.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"283 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116090939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Single Event Effects Characterization of Texas Instruments ADC12D1600CCMLS, 12 Bit, 3.2 GSPS Analog-to-Digital Converter with Static and Dynamic Inputs","authors":"K. Kruckmeyer, T. Trinh","doi":"10.1109/REDW.2014.7004591","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004591","url":null,"abstract":"Texas Instruments' ADC12D1600CCMLS is a dual channel, 12b Analog-to-Digital Converter that can support conversion rates up to 1.6 gigasamples per second (GSPS). The two channels can be seamlessly interleaved for conversion rates up to 3.2 GSPS. The device was put through heavy ion testing and was monitored for Single Event Latch-up, Single Event Functional Interrupt and Single Event Upset (SEU). Testing was done at two different ion energies and the impact of ion energy on SEU response is evaluated. SEU testing was performed with both static and dynamic inputs and the SEU signatures of each are compared.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129420445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Horton, T. Oldham, J. Lee, R. Davies, R. Koga, D. Chen
{"title":"Compendium of Ball Aerospace TID, DDD, and SEE Test Results","authors":"R. Horton, T. Oldham, J. Lee, R. Davies, R. Koga, D. Chen","doi":"10.1109/REDW.2014.7004558","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004558","url":null,"abstract":"We have conducted TID, DDD, and SEE test results on a variety of parts intended for application in different Ball Aerospace systems. Results and Discussion are presented.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128517839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Medina, M. Silveira, N. Added, V. Aguiar, R. Giacomini, E. Macchione, M. D. de Melo, R. Santos, L. Seixas
{"title":"First Successful SEE Measurements with Heavy Ions in Brazil","authors":"N. Medina, M. Silveira, N. Added, V. Aguiar, R. Giacomini, E. Macchione, M. D. de Melo, R. Santos, L. Seixas","doi":"10.1109/REDW.2014.7004571","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004571","url":null,"abstract":"In this work, the first successful SEE measurements with heavy ions in Brazil is reported. The heavy ions were produced at the São Paulo 8 UD Pelletron accelerator. <sup>12</sup>C, <sup>16</sup>O, <sup>19</sup>F, <sup>28</sup>Si, <sup>35</sup>Cl, <sup>63</sup>Cu and <sup>107</sup>Ag heavy ion beams were used to test a commercial off-the-shelf transistor. During irradiation, the response of a pMOS transistor was continuously monitored to measure the SEE events. In order to achieve a uniform low intensity beam the heavy ions were Rutherford scattered at 15<sup>0</sup> by a 275 μg/cm<sup>2</sup> gold foil.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114623573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Single-Event Characterization of the 28 nm Xilinx Kintex-7 Field-Programmable Gate Array under Heavy Ion Irradiation","authors":"David Lee, M. Wirthlin, G. Swift, A. Le","doi":"10.1109/REDW.2014.7004595","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004595","url":null,"abstract":"This study examines the single-event response of the Xilinx 28 nm Kintex-7 FPGA irradiated with heavy ions. Results for single-event effects on configuration SRAM cells, user-accessible Flip-Flop cells, and BlockRAM™ memory are provided. This study also describes an unconventional single event latch-up signature observed during testing.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121651298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Faccio, G. Blanchot, C. Fuentes, S. Michelis, S. Orlandi, S. Saggini, I. Troyano
{"title":"FEAST2: A Radiation and Magnetic Field Tolerant Point-of-Load Buck DC/DC Converter","authors":"F. Faccio, G. Blanchot, C. Fuentes, S. Michelis, S. Orlandi, S. Saggini, I. Troyano","doi":"10.1109/REDW.2014.7004569","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004569","url":null,"abstract":"In view of application in upgraded particles detectors at the LHC accelerator, CERN has developed a radiation and magnetic field tolerant 10W Point-Of-Load (POL) buck DC/DC converter. The DCDC is based on FEAST2, an ASIC designed using 'Hardness-By- Design' (HBD) techniques in a selected commercial high voltage CMOS technology. The main features of the circuit, together with electrical characterization as well as radiation data for TID, Displacement Damage (DD) and SEEs are presented. FEAST2 meets all the requirements of the LHC experiments and is also a possible good candidate for applications in Space.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128002961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Mesa, Ana B. Fernández, C. Hernando, M. McHenry, C. Aroca, M. T. Alvarez, M. Díaz-Michelena
{"title":"Effects of gamma-Ray Radiation on Magnetic Properties of NdFeB and SmCo Permanent Magnets for Space Applications","authors":"J. Mesa, Ana B. Fernández, C. Hernando, M. McHenry, C. Aroca, M. T. Alvarez, M. Díaz-Michelena","doi":"10.1109/REDW.2014.7004566","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004566","url":null,"abstract":"Several samples of NdFeB and SmCo permanent magnets have been irradiated with gamma rays up to different total irradiation doses until 1Mrad(Si). Magnetic properties of the samples have been measured at different temperatures before and after irradiation. The modifications of the magnetic parameters are presented. From these results it is highlighted which permanent magnets show more resistance to radiation and are more suitable to be included in devices for space applications or high radiation environments.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114771315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"ELDRS Characterization of Texas Instruments LM185, 1.2V Precision Reference: Retrograde Behavior Demonstrates Why Taking Interim Test Points Is Important","authors":"K. Kruckmeyer, T. Trinh","doi":"10.1109/REDW.2014.7004567","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004567","url":null,"abstract":"The LM185 1.2V reference voltage degraded through total ionizing dose radiation, but began to recover at around 70 krad. The recovery curve was different for high and low dose rates and biased and unbiased test conditions.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115100116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The Behavior of SEE Sensitivity at Various TID Levels","authors":"A. A. Novikov, A. Pechenkin, A. Chumakov","doi":"10.1109/REDW.2014.7004599","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004599","url":null,"abstract":"SEU, SEL and SET sensitivity estimation results using laser technique in dependency of TID effects are presented and discussed.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129810812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}