14 MeV和25 MeV中子对功率mosfet和igbt的单事件效应

2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI:10.1109/REDW.2014.7004592

D. Lambert, F. Desnoyers, D. Thouvenot, B. Azais

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引用次数: 8

摘要

介绍了各种商用电力电子元件在14 MeV和25 MeV中子下的单事件效应(SEE)表征:功率金属氧化物半导体场效应晶体管(MOSFET)和绝缘栅双极晶体管(IGBT)。

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Single Event Effects in Power MOSFETs and IGBTs Due to 14 MeV and 25 meV Neutrons

Single Event Effect (SEE) characterizations under 14 MeV and 25 meV neutrons are presented for various commercial power electronic components: power metal-oxide-semiconductor field effect transistors (MOSFET) and insulated gate bipolar transistors (IGBT).

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来源期刊

2014 IEEE Radiation Effects Data Workshop (REDW)

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