Single-Event Characterization of the 28 nm Xilinx Kintex-7 Field-Programmable Gate Array under Heavy Ion Irradiation

Abstract

This study examines the single-event response of the Xilinx 28 nm Kintex-7 FPGA irradiated with heavy ions. Results for single-event effects on configuration SRAM cells, user-accessible Flip-Flop cells, and BlockRAM™ memory are provided. This study also describes an unconventional single event latch-up signature observed during testing.