28nm Xilinx Kintex-7现场可编程门阵列在重离子辐照下的单事件表征

2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI:10.1109/REDW.2014.7004595

David Lee, M. Wirthlin, G. Swift, A. Le

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引用次数: 79

摘要

本研究考察了Xilinx 28nm Kintex-7 FPGA在重离子辐照下的单事件响应。提供了单事件对配置SRAM单元、用户可访问的Flip-Flop单元和BlockRAM™内存的影响结果。该研究还描述了在测试过程中观察到的非常规单事件锁存特征。

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Single-Event Characterization of the 28 nm Xilinx Kintex-7 Field-Programmable Gate Array under Heavy Ion Irradiation

This study examines the single-event response of the Xilinx 28 nm Kintex-7 FPGA irradiated with heavy ions. Results for single-event effects on configuration SRAM cells, user-accessible Flip-Flop cells, and BlockRAM™ memory are provided. This study also describes an unconventional single event latch-up signature observed during testing.

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来源期刊

2014 IEEE Radiation Effects Data Workshop (REDW)

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