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2014 IEEE Radiation Effects Data Workshop (REDW)最新文献

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Total Ionizing Dose Effects on Commercial Electronics for Cube Sats in Low Earth Orbits 近地轨道立方体卫星商用电子设备的总电离剂量效应
2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI: 10.1109/REDW.2014.7004607
Richard Netzer, K. Avery, W. Kemp, Alonzo Vera, B. Zufelt, D. Alexander
{"title":"Total Ionizing Dose Effects on Commercial Electronics for Cube Sats in Low Earth Orbits","authors":"Richard Netzer, K. Avery, W. Kemp, Alonzo Vera, B. Zufelt, D. Alexander","doi":"10.1109/REDW.2014.7004607","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004607","url":null,"abstract":"Modest total dose in low earth orbit and short cube sat missions provide an opportunity for using commercial electronics. We present the results of high and low dose rate testing of candidate commercial microcircuits.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123106309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
SEE Results of a Next Generation LEON 3FT Microprocessor 参见下一代LEON 3FT微处理器的结果
2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI: 10.1109/REDW.2014.7004586
C. Hafer, S. Guertin, B. Baranski, G. Butler, J. Nagy, S. Griffith, A. Jordan
{"title":"SEE Results of a Next Generation LEON 3FT Microprocessor","authors":"C. Hafer, S. Guertin, B. Baranski, G. Butler, J. Nagy, S. Griffith, A. Jordan","doi":"10.1109/REDW.2014.7004586","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004586","url":null,"abstract":"Special SEU test software is used to monitor the SEUs corrected by fault tolerant circuitry in the internal SRAM of the LEON 3FT processor. SEL immunity, SEU, and TID results are reviewed.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122325510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mirage: A New Proton Facility for the Study of Direct Ionization in Sub-100nm Technologies 海市蜃楼:用于亚100nm直接电离技术研究的新型质子装置
2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI: 10.1109/REDW.2014.7004578
S. Duzellier, G. Hubert, R. Rey, F. Bezerra
{"title":"Mirage: A New Proton Facility for the Study of Direct Ionization in Sub-100nm Technologies","authors":"S. Duzellier, G. Hubert, R. Rey, F. Bezerra","doi":"10.1109/REDW.2014.7004578","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004578","url":null,"abstract":"A new proton beam line has been developed at ONERA for investigating radiation effects in electronics. Standard beams are used for studying cumulated effects in optoelectronics and photonics, low current configuration has been developed for studying direct ionization effects in advanced digital technologies.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127304661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Terrestrial Neutron Induced Failure in Silicon Carbide Power MOSFETs 碳化硅功率mosfet的地源中子诱发失效
2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI: 10.1109/REDW.2014.7004598
K. Rashed, R. Wilkins, A. Akturk, R. Dwivedi, B. Gersey
{"title":"Terrestrial Neutron Induced Failure in Silicon Carbide Power MOSFETs","authors":"K. Rashed, R. Wilkins, A. Akturk, R. Dwivedi, B. Gersey","doi":"10.1109/REDW.2014.7004598","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004598","url":null,"abstract":"The first observation of neutron induced single event catastrophic failures in silicon carbide (SiC) power MOSFETs, specifically 1200V 24A Cree CMF10120D SiC power MOSFETs, is presented. The stress voltage at which these failures were observed is VDS>800V. At the highest rated drain bias of 1200V (and VGS=0V), we expect that this discrete power MOSFET will not suffer a catastrophic failure in more than 200 years at sea level due to terrestrial neutrons. The knowledge of this failure probability is important for the integration of the nascent silicon carbide high power MOSFETs into next generation high efficiency power systems.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116879203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
SEE Testing Results for RF and Microwave ICs SEE射频和微波集成电路测试结果
2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI: 10.1109/REDW.2014.7004589
G. Chukov, V. Elesin, G. Nazarova, A. Nikiforov, D. Boychenko, V. Telets, A. Kuznetsov, K. Amburkin
{"title":"SEE Testing Results for RF and Microwave ICs","authors":"G. Chukov, V. Elesin, G. Nazarova, A. Nikiforov, D. Boychenko, V. Telets, A. Kuznetsov, K. Amburkin","doi":"10.1109/REDW.2014.7004589","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004589","url":null,"abstract":"A short overview of single event effects for a variety of RF and microwave ICs is presented. New results obtained at the SPELS test center have been used along with published data.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134255153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A Total Ionizing Dose Dataset for Vertical NPN Transistors 垂直NPN晶体管的总电离剂量数据集
2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI: 10.1109/REDW.2014.7004510
D. Adams, H. A. Barnes, N.P. Goldstein, D. Harms, Jereimah J. Horner, Cory E. Sherman, Craig Stodart
{"title":"A Total Ionizing Dose Dataset for Vertical NPN Transistors","authors":"D. Adams, H. A. Barnes, N.P. Goldstein, D. Harms, Jereimah J. Horner, Cory E. Sherman, Craig Stodart","doi":"10.1109/REDW.2014.7004510","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004510","url":null,"abstract":"A Total Ionizing Dose (TID) study was performed on vertical NPN bipolar transistors used in two radiation hardened 10V and 40V BiCMOS processing technologies. The data shows increased total dose degradation with decreasing base doping concentration. Testing was performed at both high [90 rad(Si)/sec] and low [0.1 rad(Si)/sec] dose rates with minimal differences noted at the lower dose rate. The primary finding from this study was that, with proper device modeling and selection of device operating currents, these devices are suitable for 300 krad(Si) mixed signal applications.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134316566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Characterization and Analyses of RadHard-By-Design CMOS Open Drain Quad Comparators 硬设计CMOS开漏四极比较器的特性与分析
2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI: 10.1109/REDW.2014.7004555
Ray Benson, Paul Resch, R. Milanowski, J. Swonger
{"title":"Characterization and Analyses of RadHard-By-Design CMOS Open Drain Quad Comparators","authors":"Ray Benson, Paul Resch, R. Milanowski, J. Swonger","doi":"10.1109/REDW.2014.7004555","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004555","url":null,"abstract":"We provide characterization data for Total Ionizing Dose and Single Event effects on a radiation hardened by design quad CMOS comparator. We also present selected results of SPICE simulation analyses of single event transient response.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121426624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Guide to the 2013 IEEE Radiation Effects Data Workshop Record 2013年IEEE辐射效应数据研讨会记录指南
2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI: 10.1109/REDW.2014.7004573
D. Hiemstra
{"title":"Guide to the 2013 IEEE Radiation Effects Data Workshop Record","authors":"D. Hiemstra","doi":"10.1109/REDW.2014.7004573","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004573","url":null,"abstract":"The 2013 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type, or effect.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125809326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Displacement Damage Testing Results for Intersil Bipolar and BiCMOS Analog Parts Intersil双极和BiCMOS模拟部件的位移损伤测试结果
2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI: 10.1109/REDW.2014.7004564
N. V. van Vonno, J. E. Shick, P. Traynham, F. Ballou, J. S. Gill
{"title":"Displacement Damage Testing Results for Intersil Bipolar and BiCMOS Analog Parts","authors":"N. V. van Vonno, J. E. Shick, P. Traynham, F. Ballou, J. S. Gill","doi":"10.1109/REDW.2014.7004564","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004564","url":null,"abstract":"We summarize the results of 1MeV neutron displacement damage (DD) testing of several Intersil bipolar and BiCMOS analog and power management functions, including voltage references, comparators and point of load regulators.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132970875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Charged Particle Induced Degradation of Trench Type n-Channel Power MOSFETs 带电粒子诱导沟槽型n沟道功率mosfet的退化
2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI: 10.1109/REDW.2014.7004556
R. Koga, S. Bielat, J. George
{"title":"Charged Particle Induced Degradation of Trench Type n-Channel Power MOSFETs","authors":"R. Koga, S. Bielat, J. George","doi":"10.1109/REDW.2014.7004556","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004556","url":null,"abstract":"Radiation sensitivity to protons and heavy ions is observed with trench type n-channel power MOSFETs. Degradations due to SEGR/SEB as well as particle induced microdose effects are presented with comparisons to Co60 gamma-ray TID effects.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116489898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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