D. Adams, H. A. Barnes, N.P. Goldstein, D. Harms, Jereimah J. Horner, Cory E. Sherman, Craig Stodart
{"title":"垂直NPN晶体管的总电离剂量数据集","authors":"D. Adams, H. A. Barnes, N.P. Goldstein, D. Harms, Jereimah J. Horner, Cory E. Sherman, Craig Stodart","doi":"10.1109/REDW.2014.7004510","DOIUrl":null,"url":null,"abstract":"A Total Ionizing Dose (TID) study was performed on vertical NPN bipolar transistors used in two radiation hardened 10V and 40V BiCMOS processing technologies. The data shows increased total dose degradation with decreasing base doping concentration. Testing was performed at both high [90 rad(Si)/sec] and low [0.1 rad(Si)/sec] dose rates with minimal differences noted at the lower dose rate. The primary finding from this study was that, with proper device modeling and selection of device operating currents, these devices are suitable for 300 krad(Si) mixed signal applications.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A Total Ionizing Dose Dataset for Vertical NPN Transistors\",\"authors\":\"D. Adams, H. A. Barnes, N.P. Goldstein, D. Harms, Jereimah J. Horner, Cory E. Sherman, Craig Stodart\",\"doi\":\"10.1109/REDW.2014.7004510\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Total Ionizing Dose (TID) study was performed on vertical NPN bipolar transistors used in two radiation hardened 10V and 40V BiCMOS processing technologies. The data shows increased total dose degradation with decreasing base doping concentration. Testing was performed at both high [90 rad(Si)/sec] and low [0.1 rad(Si)/sec] dose rates with minimal differences noted at the lower dose rate. The primary finding from this study was that, with proper device modeling and selection of device operating currents, these devices are suitable for 300 krad(Si) mixed signal applications.\",\"PeriodicalId\":223557,\"journal\":{\"name\":\"2014 IEEE Radiation Effects Data Workshop (REDW)\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE Radiation Effects Data Workshop (REDW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/REDW.2014.7004510\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Radiation Effects Data Workshop (REDW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW.2014.7004510","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Total Ionizing Dose Dataset for Vertical NPN Transistors
A Total Ionizing Dose (TID) study was performed on vertical NPN bipolar transistors used in two radiation hardened 10V and 40V BiCMOS processing technologies. The data shows increased total dose degradation with decreasing base doping concentration. Testing was performed at both high [90 rad(Si)/sec] and low [0.1 rad(Si)/sec] dose rates with minimal differences noted at the lower dose rate. The primary finding from this study was that, with proper device modeling and selection of device operating currents, these devices are suitable for 300 krad(Si) mixed signal applications.
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