Intersil双极和BiCMOS模拟部件的位移损伤测试结果

2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI:10.1109/REDW.2014.7004564

N. V. van Vonno, J. E. Shick, P. Traynham, F. Ballou, J. S. Gill

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引用次数: 0

摘要

我们总结了几种Intersil双极和BiCMOS模拟和电源管理功能(包括电压参考、比较器和负载点调节器)的1MeV中子位移损伤(DD)测试结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Displacement Damage Testing Results for Intersil Bipolar and BiCMOS Analog Parts

We summarize the results of 1MeV neutron displacement damage (DD) testing of several Intersil bipolar and BiCMOS analog and power management functions, including voltage references, comparators and point of load regulators.

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来源期刊

2014 IEEE Radiation Effects Data Workshop (REDW)

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