Charged Particle Induced Degradation of Trench Type n-Channel Power MOSFETs

2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI:10.1109/REDW.2014.7004556

R. Koga, S. Bielat, J. George

引用次数: 2

Abstract

Radiation sensitivity to protons and heavy ions is observed with trench type n-channel power MOSFETs. Degradations due to SEGR/SEB as well as particle induced microdose effects are presented with comparisons to Co60 gamma-ray TID effects.

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带电粒子诱导沟槽型n沟道功率mosfet的退化

用沟槽型n沟道功率mosfet观察了对质子和重离子的辐射敏感性。由于SEGR/SEB的降解以及颗粒诱导的微剂量效应，并与Co60 γ射线TID效应进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2014 IEEE Radiation Effects Data Workshop (REDW)

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