{"title":"带电粒子诱导沟槽型n沟道功率mosfet的退化","authors":"R. Koga, S. Bielat, J. George","doi":"10.1109/REDW.2014.7004556","DOIUrl":null,"url":null,"abstract":"Radiation sensitivity to protons and heavy ions is observed with trench type n-channel power MOSFETs. Degradations due to SEGR/SEB as well as particle induced microdose effects are presented with comparisons to Co60 gamma-ray TID effects.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Charged Particle Induced Degradation of Trench Type n-Channel Power MOSFETs\",\"authors\":\"R. Koga, S. Bielat, J. George\",\"doi\":\"10.1109/REDW.2014.7004556\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Radiation sensitivity to protons and heavy ions is observed with trench type n-channel power MOSFETs. Degradations due to SEGR/SEB as well as particle induced microdose effects are presented with comparisons to Co60 gamma-ray TID effects.\",\"PeriodicalId\":223557,\"journal\":{\"name\":\"2014 IEEE Radiation Effects Data Workshop (REDW)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE Radiation Effects Data Workshop (REDW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/REDW.2014.7004556\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Radiation Effects Data Workshop (REDW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW.2014.7004556","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Charged Particle Induced Degradation of Trench Type n-Channel Power MOSFETs
Radiation sensitivity to protons and heavy ions is observed with trench type n-channel power MOSFETs. Degradations due to SEGR/SEB as well as particle induced microdose effects are presented with comparisons to Co60 gamma-ray TID effects.
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