硬设计CMOS开漏四极比较器的特性与分析

2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI:10.1109/REDW.2014.7004555

Ray Benson, Paul Resch, R. Milanowski, J. Swonger

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引用次数: 2

摘要

我们提供了总电离剂量和单事件效应对设计四元CMOS比较器辐射硬化的表征数据。我们还介绍了单事件瞬态响应的SPICE模拟分析的部分结果。

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Characterization and Analyses of RadHard-By-Design CMOS Open Drain Quad Comparators

We provide characterization data for Total Ionizing Dose and Single Event effects on a radiation hardened by design quad CMOS comparator. We also present selected results of SPICE simulation analyses of single event transient response.

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来源期刊

2014 IEEE Radiation Effects Data Workshop (REDW)

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