Design and Radiation Hardness of Next Generation Solar UV Radiometers

2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI:10.1109/REDW.2014.7004563

S. Gissot, A. BenMoussa, B. Giordanengo, A. Soltani, Terubumi Saito, U. Schuhle, U. Kroth, A. Gottwald

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引用次数: 2

Abstract

For next space-based ultraviolet (UV) solar radiometers, we propose a design based on subsystem components that are selected according to lessons learned from previous flying missions and ground irradiation campaigns. UV interference filters inherited from space-based solar missions show strong degradation caused by structural changes that lead to an important decrease of visible light rejection. Wide bandgap semiconductors (WBGS) are used for the photodetectors: innovative metal-semiconductor-metal (MSM) based on Aluminum Nitride (AlN) and Diamond-based PIN photodetectors were developed, characterized and compared to the commonly used silicon photodiode technology (AXUV and SXUV types). Insignificant degradation of the WBGS based-photodetector performances were observed after exposure to protons of 14.4 MeV energy showing a good radiation tolerance up to fluences of 1x10^11 p+/cm2. Onboard calibration strategy based on UV LEDs are used as well to distinguish the detector's drift from inevitable degradations of the optical front filters.

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新一代太阳紫外线辐射计的设计与辐射硬度

对于下一个天基紫外(UV)太阳辐射计，我们提出了一种基于子系统组件的设计，这些组件是根据以前的飞行任务和地面辐射活动的经验教训选择的。天基太阳任务遗留下来的紫外线干扰滤光片由于结构变化而表现出强烈的退化，导致可见光拒光率显著下降。采用宽带隙半导体(WBGS)作为光电探测器:开发了基于氮化铝(AlN)和金刚石基PIN的新型金属-半导体-金属(MSM)光电探测器，对其进行了表征，并与常用的硅光电二极管技术(AXUV和SXUV型)进行了比较。暴露于14.4 MeV能量的质子后，WBGS光电探测器的性能没有明显下降，具有良好的耐辐射能力，可达1x10^11 p+/cm2。基于UV led的板载校准策略也被用于区分检测器漂移和光学前滤光片不可避免的退化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2014 IEEE Radiation Effects Data Workshop (REDW)

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