K. Label, M. O’Bryan, Dakai Chen, M. Campola, M. Casey, J. Pellish, J. Lauenstein, E. Wilcox, Alyson D. Topper, R. Ladbury, M. Berg, Robert A. Gigliuto, A. Boutte, Donna J. Cochran, S. Buchner, D. Violette
{"title":"Compendium of Single Event Effects, Total Ionizing Dose, and Displacement Damage for Candidate Spacecraft Electronics for NASA","authors":"K. Label, M. O’Bryan, Dakai Chen, M. Campola, M. Casey, J. Pellish, J. Lauenstein, E. Wilcox, Alyson D. Topper, R. Ladbury, M. Berg, Robert A. Gigliuto, A. Boutte, Donna J. Cochran, S. Buchner, D. Violette","doi":"10.1109/REDW.2014.7004560","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004560","url":null,"abstract":"We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). This paper is a summary of test results.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121583694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. V. Vonno, B. Williams, S. D. Turner, E. Thomson, Serge Bernard, D. Goodhew
{"title":"Total Dose and Single Event Effects Testing of the Intersil ISL71090SEH and ISL71091SEH Precision Voltage References","authors":"N. V. Vonno, B. Williams, S. D. Turner, E. Thomson, Serge Bernard, D. Goodhew","doi":"10.1109/REDW.2014.7004604","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004604","url":null,"abstract":"We report the results of SEE and low and high dose rate total dose testing of the Intersil ISL71090SEH and ISL71091SEH hardened voltage references together with a discussion of electrical specifications and fabrication process.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132452605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Intensity Upgrade to the TRIUMF 500 MeV Large-Area Neutron Beam","authors":"E. Blackmore, M. Trinczek","doi":"10.1109/REDW.2014.7004574","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004574","url":null,"abstract":"The TRIUMF BL1B neutron and proton facility has been upgraded with improved shielding of the neutron-production converter to provide higher neutron intensities. The facility can provide both collimated beams for device testing and large-area beams for systems testing. FLUKA calculations were performed to optimize the shielding and to determine the neutron energy spectrum and transverse profiles. Activation measurements were done to confirm the neutron flux at different positions.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133635817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Malou, G. Gasiot, R. Chevallier, L. Dugoujon, P. Roche
{"title":"TID and SEE Characterization of Rad-Hardened 1.2GHz PLL IP from New ST CMOS 65nm Space Technology","authors":"F. Malou, G. Gasiot, R. Chevallier, L. Dugoujon, P. Roche","doi":"10.1109/REDW.2014.7004601","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004601","url":null,"abstract":"We present Single Event Effects characterization and Total Ionizing Dose behavior up to 300 krad(Si) on Rad-Hardened 1.2GHz PLL IP and cold-spare I/O from new ST CMOS 65nm space technology.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126632185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Lidow, A. Nakata, M. Rearwin, J. Strydom, A. M. Zafrani
{"title":"Single-Event and Radiation Effect on Enhancement Mode Gallium Nitride FETs","authors":"A. Lidow, A. Nakata, M. Rearwin, J. Strydom, A. M. Zafrani","doi":"10.1109/REDW.2014.7004594","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004594","url":null,"abstract":"This paper presents responses of the latest MiGaN FETs to space radiation conditions. The new MiGaN has shown radiation tolerance to 1Mrad TID and SEGR and SEB immunity at LET of 85Mev/(mg/cm2) as well as immunity to displacement damage and Low dose (ELDRs) testing.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122405111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Daniel, C. Plettner, A. Schuttauf, C. Poivey, F. Tonicello, M. Triggianese
{"title":"Laser Pulse Tests of Bipolar Junction Transistors (BJTs) for SET Analysis","authors":"C. Daniel, C. Plettner, A. Schuttauf, C. Poivey, F. Tonicello, M. Triggianese","doi":"10.1109/REDW.2014.7004576","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004576","url":null,"abstract":"In order to study the Single Event Transient (SET) sensitivity of discrete bipolar junction transistors, laser tests conducted at EADS Innovation Works in Sureness are presented and discussed. A number of different BJT samples have been tested in different operating conditions. The tests demonstrate that: discrete BJTs are indeed sensitive to collected charge; the most sensitive region is the collector/base junction and that the different internal structure gives different SET shapes. We present measurements, simulations and a comparison for the SETs modeled in PSPICE and tested with a laser.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127328907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Michael J. Tostanoski, T. F. Deaton, Roy E. Strayer, R. Goldflam, T. Z. Fullem
{"title":"Neutron Induced Single Event Upset (SEU) Testing of Static Random Access Memory (SRAM) Devices","authors":"Michael J. Tostanoski, T. F. Deaton, Roy E. Strayer, R. Goldflam, T. Z. Fullem","doi":"10.1109/REDW.2014.7004579","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004579","url":null,"abstract":"Results of neutron induced single event upset (SEU) testing of two Synchronous Burst Static Random Access Memory (SRAM) devices, the Galvantech GVT71128G36 128K x 36 and the GSI GS816273CC 256K x 72, and the internal RAM (iRAM) in the Texas Instruments SM32C6713BGDPA20EP Digital Signal Processor (DSP) are described. Four samples of each device type were irradiated with a 14-MeV neutron source, with and without a polyethylene moderator. The units were irradiated using a continual read/write correct loop using several bit patterns. All units-under-test were operated during irradiation using the respective operating datasheet supply potential. It is noted that one of these devices exhibited a large low energy (<; 1MeV) neutron cross section.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127408674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Anashin, G. Protopopov, O. S. Kozyukova, P. Binyukov, Alexey P. Polinkin
{"title":"Analysis of Space Environment Measurement Carried out by the Roscosmos Monitoring System Elements","authors":"V. Anashin, G. Protopopov, O. S. Kozyukova, P. Binyukov, Alexey P. Polinkin","doi":"10.1109/REDW.2014.7004554","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004554","url":null,"abstract":"Total ionizing dose (TID) sensors data analysis is presented. TID sensor features are described. Dose rate abrupt increases analysis is carried out considering other flight data. The flight data is compared with space models.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127944695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Morilla, G. Muñiz, M. Domínguez, P. Martin, J. Jimenez, J. Praena, E. Muñoz, C. Sánchez-Angulo, G. Fernández
{"title":"New Gamma-Radiation Facility for Device Testing in Spain","authors":"Y. Morilla, G. Muñiz, M. Domínguez, P. Martin, J. Jimenez, J. Praena, E. Muñoz, C. Sánchez-Angulo, G. Fernández","doi":"10.1109/REDW.2014.7004580","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004580","url":null,"abstract":"Only few laboratories around the world are available for complete testing of devices to be used in space missions. RADLAB can achieve the standards and meet special requests, in the lead to complete component qualification.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124324101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Whiteside, P. Brown, T. Beek, T. Horbury, C. Carr
{"title":"TID Response of a Hybrid AMR Vector Magnetometer","authors":"B. Whiteside, P. Brown, T. Beek, T. Horbury, C. Carr","doi":"10.1109/REDW.2014.7004602","DOIUrl":"https://doi.org/10.1109/REDW.2014.7004602","url":null,"abstract":"We present TID response up to 100 kRad(Si), of the three-axis vector magnetoresistive hybrid MAGIC, a low resource magnetometer integrated with a H-bridge drive on a co-fired ceramic chip.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132240049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}