静态随机存取存储器(SRAM)器件的中子诱导单事件扰动(SEU)测试

2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI:10.1109/REDW.2014.7004579

Michael J. Tostanoski, T. F. Deaton, Roy E. Strayer, R. Goldflam, T. Z. Fullem

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引用次数: 5

摘要

介绍了两种同步突发静态随机存取存储器(SRAM)器件(Galvantech GVT71128G36 128K x 36和GSI GS816273CC 256K x 72)以及德州仪器(Texas Instruments) SM32C6713BGDPA20EP数字信号处理器(DSP)的内部RAM (iRAM))的中子诱导单事件扰动(SEU)测试结果。每种器件类型的四个样品分别用14mev中子源照射，有和没有聚乙烯慢化剂。使用几个位模式的连续读/写正确循环照射单元。在辐照期间，使用各自的操作数据表供电电位操作所有待测单元。值得注意的是，其中一个器件表现出较大的低能(<;1MeV)中子截面。

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Neutron Induced Single Event Upset (SEU) Testing of Static Random Access Memory (SRAM) Devices

Results of neutron induced single event upset (SEU) testing of two Synchronous Burst Static Random Access Memory (SRAM) devices, the Galvantech GVT71128G36 128K x 36 and the GSI GS816273CC 256K x 72, and the internal RAM (iRAM) in the Texas Instruments SM32C6713BGDPA20EP Digital Signal Processor (DSP) are described. Four samples of each device type were irradiated with a 14-MeV neutron source, with and without a polyethylene moderator. The units were irradiated using a continual read/write correct loop using several bit patterns. All units-under-test were operated during irradiation using the respective operating datasheet supply potential. It is noted that one of these devices exhibited a large low energy (<; 1MeV) neutron cross section.

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2014 IEEE Radiation Effects Data Workshop (REDW)

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