增强模式氮化镓场效应管的单事件效应和辐射效应

2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI:10.1109/REDW.2014.7004594

A. Lidow, A. Nakata, M. Rearwin, J. Strydom, A. M. Zafrani

{"title":"增强模式氮化镓场效应管的单事件效应和辐射效应","authors":"A. Lidow, A. Nakata, M. Rearwin, J. Strydom, A. M. Zafrani","doi":"10.1109/REDW.2014.7004594","DOIUrl":null,"url":null,"abstract":"This paper presents responses of the latest MiGaN FETs to space radiation conditions. The new MiGaN has shown radiation tolerance to 1Mrad TID and SEGR and SEB immunity at LET of 85Mev/(mg/cm2) as well as immunity to displacement damage and Low dose (ELDRs) testing.","PeriodicalId":223557,"journal":{"name":"2014 IEEE Radiation Effects Data Workshop (REDW)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":"{\"title\":\"Single-Event and Radiation Effect on Enhancement Mode Gallium Nitride FETs\",\"authors\":\"A. Lidow, A. Nakata, M. Rearwin, J. Strydom, A. M. Zafrani\",\"doi\":\"10.1109/REDW.2014.7004594\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents responses of the latest MiGaN FETs to space radiation conditions. The new MiGaN has shown radiation tolerance to 1Mrad TID and SEGR and SEB immunity at LET of 85Mev/(mg/cm2) as well as immunity to displacement damage and Low dose (ELDRs) testing.\",\"PeriodicalId\":223557,\"journal\":{\"name\":\"2014 IEEE Radiation Effects Data Workshop (REDW)\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"26\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE Radiation Effects Data Workshop (REDW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/REDW.2014.7004594\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Radiation Effects Data Workshop (REDW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW.2014.7004594","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 26

摘要

本文介绍了最新的MiGaN场效应管对空间辐射条件的响应。新型MiGaN具有1Mrad TID和SEGR的辐射耐受性，在85Mev/(mg/cm2)的LET下具有SEB免疫能力，以及对位移损伤和低剂量(ELDRs)测试的免疫能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Single-Event and Radiation Effect on Enhancement Mode Gallium Nitride FETs

This paper presents responses of the latest MiGaN FETs to space radiation conditions. The new MiGaN has shown radiation tolerance to 1Mrad TID and SEGR and SEB immunity at LET of 85Mev/(mg/cm2) as well as immunity to displacement damage and Low dose (ELDRs) testing.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2014 IEEE Radiation Effects Data Workshop (REDW)

自引率

0.00%

发文量