Floating Gate P-MOS Radiation Sensor Charging Cycles Characterization

2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI:10.1109/REDW.2014.7004572

J. Cesari, D. Gomez, M. Roca, E. Isern, Á. Pineda, E. García-Moreno

引用次数: 4

Abstract

A recharging cycles characterization of a floating Gate PMOS radiation sensor is presented. The radiation sensor with an extra circuitry to emulate the radiation environment in order to discharge the floating gate has been tested using an automated measurement system. The sensor performance and reliability is analyzed after those tests.

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浮栅P-MOS辐射传感器充电周期表征

介绍了一种浮栅PMOS辐射传感器的充电循环特性。采用自动测量系统对辐射传感器进行了测试，该传感器具有一个额外的电路来模拟辐射环境，以便释放浮栅。最后对传感器的性能和可靠性进行了分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2014 IEEE Radiation Effects Data Workshop (REDW)

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