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2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)最新文献

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Mechanical lapping of ultra-thin wafers for 3D integration 用于3D集成的超薄晶圆的机械研磨
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838728
S. Pinel, J. Tasselli, J. Bailbé, A. Marty, P. Puech, D. Estève
{"title":"Mechanical lapping of ultra-thin wafers for 3D integration","authors":"S. Pinel, J. Tasselli, J. Bailbé, A. Marty, P. Puech, D. Estève","doi":"10.1109/ICMEL.2000.838728","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838728","url":null,"abstract":"This paper presents a new technique for thinning down up to 10 /spl mu/m and handling various semiconductor devices, and transferring them onto host substrates. An optimized mechanical lapping is used to remove the wafer.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129288302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Efficient ANN-based interconnect delay and crosstalk modeling 高效的基于人工神经网络的互连延迟和串扰建模
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838793
A. Ilumoka
{"title":"Efficient ANN-based interconnect delay and crosstalk modeling","authors":"A. Ilumoka","doi":"10.1109/ICMEL.2000.838793","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838793","url":null,"abstract":"The dominance of system performance by interconnect delay in deep-submicron design presents many challenges to physical design tool developers. This paper presents an efficient ANN-based technique for modeling interconnect crosstalk in integrated circuits. ANN models for user-defined interconnect primitives called wirecells are trained and tested using a database created using a suitable simulation package. For fixed wirecell length and geometry, inputs to the ANN include signal frequency, input voltage amplitude, near and far end termination impedances. Outputs derived from the ANN include crosstalk voltage peak and RMS values and spectral composition. Experimental results demonstrate the ability of this approach to successfully predict coupled noise in modest cpu times compared with existing approaches.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128015765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Power VDMOS transistors response to lowered temperature conditions 功率VDMOS晶体管响应较低的温度条件
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840595
S. Djoric-Veljkovic, S. Golubovic, V. Davidovic, N. Stojadinovic
{"title":"Power VDMOS transistors response to lowered temperature conditions","authors":"S. Djoric-Veljkovic, S. Golubovic, V. Davidovic, N. Stojadinovic","doi":"10.1109/ICMEL.2000.840595","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840595","url":null,"abstract":"In this paper the results of investigation of lowered temperature effects on commercial n-channel power VDMOS transistors are presented. It is found that electrical parameters, threshold voltage and gain factor, of the transistors subjected to lowered temperature are generally improved.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125642528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Schottky barrier contribution to photoacoustic effect in Au-Si system Au-Si体系中肖特基势垒对光声效应的贡献
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840552
D. Todorović, P. Nikolić, M. Smiljanić, R. Petrovic, A. Bojic̆ić, D. Vasiljević-Radović, K. Radulović
{"title":"The Schottky barrier contribution to photoacoustic effect in Au-Si system","authors":"D. Todorović, P. Nikolić, M. Smiljanić, R. Petrovic, A. Bojic̆ić, D. Vasiljević-Radović, K. Radulović","doi":"10.1109/ICMEL.2000.840552","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840552","url":null,"abstract":"The photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured for dependence on the modulation frequency of excitation optical beam, using the PA frequency transmission technique. Thermal, elastic and electronic transport parameters were obtained by the analysis of experimental and theoretical PA signals, including the Schottky barrier effect, for a metal film-semiconductor substrate sample.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127058008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis, modeling and optimization of thick film solenoid-bar type inductors and transformers 厚膜电磁棒式电感和变压器的分析、建模和优化
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838743
L. Zivanov, V. Desnica, O. Aleksic
{"title":"Analysis, modeling and optimization of thick film solenoid-bar type inductors and transformers","authors":"L. Zivanov, V. Desnica, O. Aleksic","doi":"10.1109/ICMEL.2000.838743","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838743","url":null,"abstract":"Solenoid-bar type inductors and transformers with different turns ratio are analyzed. In this paper in equivalent circuit models for inductors and transformers are presented. Parasitic physical phenomena important to prediciton of inductor quality factor Q are included in the model, and special attention is paid to inductance calculations.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127149845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Variation of reflectivity spectra, preferred orientation and stoichiometry of polycrystalline TiN films due to nitrogen flow variation 氮流量变化对多晶TiN薄膜反射率光谱、择优取向和化学计量的影响
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840569
M. Zlatanović, D. Dukic, U. Kascak, I. Popović
{"title":"Variation of reflectivity spectra, preferred orientation and stoichiometry of polycrystalline TiN films due to nitrogen flow variation","authors":"M. Zlatanović, D. Dukic, U. Kascak, I. Popović","doi":"10.1109/ICMEL.2000.840569","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840569","url":null,"abstract":"TiN samples were deposited in a DC reactive magnetron deposition system with varying deposition parameters. It was found that slight variations of the nitrogen content during deposition affected preferred growth and composition which strongly influenced optical reflectivity of the investigated samples.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"65 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133136125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of high power press-pack IGBT and its applications 大功率压封装IGBT的研制及其应用
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840538
Y. Uchida, Y. Seki, Y. Takahashi, M. Ichijoh
{"title":"Development of high power press-pack IGBT and its applications","authors":"Y. Uchida, Y. Seki, Y. Takahashi, M. Ichijoh","doi":"10.1109/ICMEL.2000.840538","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840538","url":null,"abstract":"Press-pack IGBT has been developed in recent years as a superior high power IGBT device to conventional IGBT module in reliability and performance. This type of IGBT is replacing GTO or thyristor in such applications as traction, power transmission and industrial motor drive because of its excellent advantages such as high performance, high reliability, compactness due to the both-sided cooling, rupture free feature, and so forth. This paper reviews the performance and structure of 2.5 kV and 4.5 kV press-pack IGBT's and their major applications.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"746 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132160141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
RESCUER-the revolution in multidomain simulations. II rescue——多域模拟的革命。2。
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838752
M. Zubert, A. Napieralski
{"title":"RESCUER-the revolution in multidomain simulations. II","authors":"M. Zubert, A. Napieralski","doi":"10.1109/ICMEL.2000.838752","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838752","url":null,"abstract":"For pt.I see ibid., vol.2, pp.549-53 (2000). This paper presents an application of the new RESCUER simulation tool to modelling of physical phenomena in an amperometric enzyme glucose biosensor are demonstrated.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"197 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133885057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Thermal field-the source of the emergence of nonequilibrium charge carriers in semiconductors 热场——半导体中非平衡载流子产生的根源
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840550
G. Espejo, I. Volovichev, Y. Gurevich, G.N. Logvinov, A. Meriuts, O. Titov
{"title":"Thermal field-the source of the emergence of nonequilibrium charge carriers in semiconductors","authors":"G. Espejo, I. Volovichev, Y. Gurevich, G.N. Logvinov, A. Meriuts, O. Titov","doi":"10.1109/ICMEL.2000.840550","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840550","url":null,"abstract":"The new point of view on thermoelectric phenomena as a transport process of nonequilibrium charge carriers is presented. It is shown that Fermi quasilevels which characterize transport in system far from equilibrium can be nonmonotonic functions of coordinate. The role of recombination in forming of thermoelectric phenomena is discussed for the first time. It is shown that in the presence of thermal fields appears a new term in the expression for recombination which depends on the inhomogeneity of temperature. If electron and hole temperatures are different, which is a typical case in semiconductors, appears one more new term in the expression for recombination proportional to the difference of electron and hole temperatures. The new method for the characterization of semiconductor materials connected with measure of thermopower is proposed. It is shown that nonstationary thermal fields are most appropriate for this purpose.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"277 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122707617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Non-standard physicochemical and electrical examinations in thick-film and LTCC technologies 厚膜和LTCC技术的非标准理化和电学检查
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838740
A. Dziedzic
{"title":"Non-standard physicochemical and electrical examinations in thick-film and LTCC technologies","authors":"A. Dziedzic","doi":"10.1109/ICMEL.2000.838740","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838740","url":null,"abstract":"The aim of this paper is to present and discuss some non-standard diagnostic methods used for physicochemical and electrical investigations of raw materials, inks, films and devices necessary for or fabricated by polymer or cermet thick-film technology as well as Low Temperature Cofired Ceramics (LTCC) one. Both manufacturer's and user's point of view are presented. Besides description of particular methods, their results and conclusions affected improvement of thick-film device fabrication and reliability increase is discussed.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"2012 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114874324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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