Au-Si体系中肖特基势垒对光声效应的贡献

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI:10.1109/ICMEL.2000.840552

D. Todorović, P. Nikolić, M. Smiljanić, R. Petrovic, A. Bojic̆ić, D. Vasiljević-Radović, K. Radulović

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引用次数: 0

摘要

研究了金属-半导体体系中的光声效应，即肖特基势垒对半导体中热输运和电子输运过程的影响。采用扩频传输技术，测量了激发光束调制频率对幅值和相位谱的影响。通过分析金属薄膜半导体衬底样品的实验和理论PA信号，包括肖特基势垒效应，获得了热、弹性和电子输运参数。

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The Schottky barrier contribution to photoacoustic effect in Au-Si system

The photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured for dependence on the modulation frequency of excitation optical beam, using the PA frequency transmission technique. Thermal, elastic and electronic transport parameters were obtained by the analysis of experimental and theoretical PA signals, including the Schottky barrier effect, for a metal film-semiconductor substrate sample.

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来源期刊

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)

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