大功率压封装IGBT的研制及其应用

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI:10.1109/ICMEL.2000.840538

Y. Uchida, Y. Seki, Y. Takahashi, M. Ichijoh

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引用次数: 11

摘要

压装IGBT是近年来发展起来的一种高功率IGBT器件，在可靠性和性能上都优于传统IGBT模块。这种类型的IGBT由于其高性能、高可靠性、双面冷却紧凑、无破裂等优异优点，在牵引、动力传动和工业电机驱动等应用中正在取代GTO或晶闸管。本文综述了2.5 kV和4.5 kV压包式IGBT的性能、结构及其主要应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Development of high power press-pack IGBT and its applications

Press-pack IGBT has been developed in recent years as a superior high power IGBT device to conventional IGBT module in reliability and performance. This type of IGBT is replacing GTO or thyristor in such applications as traction, power transmission and industrial motor drive because of its excellent advantages such as high performance, high reliability, compactness due to the both-sided cooling, rupture free feature, and so forth. This paper reviews the performance and structure of 2.5 kV and 4.5 kV press-pack IGBT's and their major applications.

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来源期刊

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)

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