2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits最新文献_第6页

Influence of cooling on the performance of Silicon solar cells 冷却对硅太阳能电池性能的影响

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232567

Y.F. Wang, W. Wu, P. Li, L. Zhang, Z. Ma

引用次数: 3

A high-G silicon carbide vertical capacitive micromachined accelerometer 高g碳化硅垂直电容式微机械加速度计

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232644

Ting-Pin Yang, Guosheng Sun, Y. Zhao, Jin Ning, Xingfang Liu, Lei Wang, Wanshun Zhao, Yiping Zeng, Jinmin Li

引用次数: 1

Modeling of Electromigration Failure Distribution of Cu Vias: Critical Current Density Effects and Reliability Extrapolation Procedures 铜过孔电迁移失效分布的建模:临界电流密度效应和可靠性外推程序

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232737

A. Oates, M. H. Lin

{"title":"Modeling of Electromigration Failure Distribution of Cu Vias: Critical Current Density Effects and Reliability Extrapolation Procedures","authors":"A. Oates, M. H. Lin","doi":"10.1109/IPFA.2009.5232737","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232737","url":null,"abstract":"The ever increasing demand for higher performance integrated circuits has led to the introduction of Cu / low-k interconnects. Electromigration failure of Cu interconnects is one of the major reliability concerns for circuits because dual damascene vias are inherently susceptible to void formation. Moreover, technology scaling leads to increased current carrying requirements, and this together with smaller critical geometries (i.e. smaller volumes of material associated with failure) presents an increasing challenge to ensure the long-term reliability of interconnects. The development of predictive models of via electromigration failure is an essential aspect of continued circuit reliability assurance. One significant challenge to the development of reliability models is the existence of multiple voiding modes in Cu vias. Development of accurate models requires a fundamental understanding of these voiding morphologies as a function of stress conditions, conductor geometry and processing, together with knowledge of void nucleation and growth kinetics.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116507069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The effect of microstructure on the electromigration lifetime distribution 微观组织对电迁移寿命分布的影响

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232733

R. L. de Orio, H. Ceric, J. Červenka, S. Selberherr

引用次数: 0

Improving reliability and diminishing parasitic capacitance effects in a vertical transistor with embedded gate 提高嵌入式栅极垂直晶体管的可靠性和减小寄生电容效应

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232696

Jyi-Tsong Lin, C. Kuo, Tai-Yi Lee, Y. Eng, Tzu-Feng Chang, Po-Hsieh Lin, Hsuan-Hsu Chen, Chih-Hung Sun, Hsien-Nan Chiu

引用次数: 3

Applications of scanning near-field photon emission microscopy 扫描近场光子发射显微镜的应用

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232566

D. Isakov, B. Tan, J. Phang, Y. Yeo, A. Tio, Y. Zhang, T. Geinzer, L. Balk

引用次数: 3

Controlling the growth of VOx films for various optoelectronic applications 控制用于各种光电应用的VOx薄膜的生长

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232582

Xiaomei Wang, Xiangdong Xu, Zhiming Wu, Yadong Jiang, Shaowei He

引用次数: 0

Reliability analysis and hygro-thermo-mechanical design for MEMS-based pressure sensor 基于mems的压力传感器可靠性分析及湿热机械设计

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232560

H. Hsu, L. Chu, W. Shieh, M. Weng, F. R. Hsu

{"title":"Reliability analysis and hygro-thermo-mechanical design for MEMS-based pressure sensor","authors":"H. Hsu, L. Chu, W. Shieh, M. Weng, F. R. Hsu","doi":"10.1109/IPFA.2009.5232560","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232560","url":null,"abstract":"Moisture properties such as moisture diffusivity and hygroscopic swelling have been carefully investigated for polymeric materials used on the MEMS-based pressure sensor. An improved TMA/TGA integrated method is used to characterize the hygroscopic swelling property. An analytical moisture diffusion solution is proposed to determine the moisture distribution and consequent hygroscopic induced strain as well as stress. By applying Fick's second law of diffusion, the “thermal wetness” analogous technique is applied to solve moisture absorption/desorption models. The analytical expression for total expansion strain due to hygro-thermo-mechanical coupled effect is implemented using finite element software ANSYS. Finite element predictions reveal the significance of contribution of hygroswelling induced effective stress/strain. Reliability analysis and hygro-thermo-mechanical design for a MEMS-based pressure sensor are performed in accordance with JEDEC preconditioning standard JESD22-A120. A series of comprehensive experimental works and parametric studies were conducted in this paper.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132687821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Investigation on TSOP warpage mechanism and improvement method TSOP翘曲机理及改进方法的探讨

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232732

Lei Wang, Zhenqing Zhao, Jianhui Wang, L. Wen, Qian Wang, Jaisung Lee

引用次数: 1

Characterization of pad surface defect by TEM, SEM and EDX 焊盘表面缺陷的TEM、SEM和EDX表征

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232589

Ming Li, Jing Zhou, Qiang Chen, W. Kary Chien

引用次数: 1