2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits最新文献_第6页

Modeling of Electromigration Failure Distribution of Cu Vias: Critical Current Density Effects and Reliability Extrapolation Procedures 铜过孔电迁移失效分布的建模:临界电流密度效应和可靠性外推程序

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232737

A. Oates, M. H. Lin

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引用次数: 0

Infrared characteristics of ni-doped ZnO thin films ni掺杂ZnO薄膜的红外特性

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232578

Jinghua Jiang, D. He, Yongsheng Wang, M. Fu, B. Feng, Changbin Ju, Yu-fan Du

引用次数: 0

A novel method for determing the lifetime of devices based on process-stress accelerated degradation test 一种基于过程应力加速退化试验确定器件寿命的新方法

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232608

Guo Chunsheng, Bai Yunxia, Zhang Yuezong, Man Weidong, F. Shiwei, Lv Changzhi, L. Zhiguo

引用次数: 3

Failure analysis of VDMOS in DC/DC converter DC/DC变换器中VDMOS失效分析

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232626

Y. Liu, Ch. Y. Huang, N. N. Shan, C. Lu, G. Gao

引用次数: 5

Anomalous “sweeping stress” induced degradation in n-type low temperature poly-Si thin film transistors n型低温多晶硅薄膜晶体管的异常“横扫应力”诱发退化

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232717

Dapeng Zhou, Mingxiang Wang, Meng Zhang, Han Hao, Dongli Zhang, M. Wong

引用次数: 1

Best test pattern failure analysis flow for functional logic failure localization by IR-OBIRCH technique 基于IR-OBIRCH技术的功能逻辑故障定位的最佳测试模式故障分析流程

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232672

A. Machouat, G. Haller, V. Goubier, D. Lewis, P. Perdu, V. Pouget, F. Essely

引用次数: 1

Failure analysis of odd/even word-line failure to improve the endurance performance of a NAND Flash 提高NAND闪存持久性能的奇/偶字行失效分析

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232715

Young Sun, Mark Zhang, Jossen Yu, W. Dong, W. Chien

引用次数: 0

The effect of microstructure on the electromigration lifetime distribution 微观组织对电迁移寿命分布的影响

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232733

R. L. de Orio, H. Ceric, J. Červenka, S. Selberherr

引用次数: 0

Improving reliability and diminishing parasitic capacitance effects in a vertical transistor with embedded gate 提高嵌入式栅极垂直晶体管的可靠性和减小寄生电容效应

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232696

Jyi-Tsong Lin, C. Kuo, Tai-Yi Lee, Y. Eng, Tzu-Feng Chang, Po-Hsieh Lin, Hsuan-Hsu Chen, Chih-Hung Sun, Hsien-Nan Chiu

引用次数: 3

Using nanoprobing and SEM doping contrast techniques for failure analysis of current leakage in CMOS HV technology 利用纳米探针和SEM掺杂对比技术对CMOS高压技术中的漏电流进行失效分析

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232705

H. Lin, Randy Wang

引用次数: 3