A novel method for determing the lifetime of devices based on process-stress accelerated degradation test

Abstract

A novel method, which enables rapid determination of lifetime for semiconductor devices, is presented based on progressive-stress accelerated degradation test. Through two steps of acceleration: firstly, using process-stress accelerated test to accelerate the parameter degradation; secondly, using the data of 1∼5% degradation to extrapolate the data of 10∼50% degradation, this method shortens the test time to dozens or several hundreds of hours. To demonstrate the application of the method, a kind of mature products, Si PNP BJT 3CG120, was tested.