2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits最新文献_第5页

Characterization of pad surface defect by TEM, SEM and EDX 焊盘表面缺陷的TEM、SEM和EDX表征

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232589

Ming Li, Jing Zhou, Qiang Chen, W. Kary Chien

引用次数: 1

Controlling the growth of VOx films for various optoelectronic applications 控制用于各种光电应用的VOx薄膜的生长

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232582

Xiaomei Wang, Xiangdong Xu, Zhiming Wu, Yadong Jiang, Shaowei He

引用次数: 0

Applications of scanning near-field photon emission microscopy 扫描近场光子发射显微镜的应用

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232566

D. Isakov, B. Tan, J. Phang, Y. Yeo, A. Tio, Y. Zhang, T. Geinzer, L. Balk

引用次数: 3

Reliability analysis and hygro-thermo-mechanical design for MEMS-based pressure sensor 基于mems的压力传感器可靠性分析及湿热机械设计

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232560

H. Hsu, L. Chu, W. Shieh, M. Weng, F. R. Hsu

{"title":"Reliability analysis and hygro-thermo-mechanical design for MEMS-based pressure sensor","authors":"H. Hsu, L. Chu, W. Shieh, M. Weng, F. R. Hsu","doi":"10.1109/IPFA.2009.5232560","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232560","url":null,"abstract":"Moisture properties such as moisture diffusivity and hygroscopic swelling have been carefully investigated for polymeric materials used on the MEMS-based pressure sensor. An improved TMA/TGA integrated method is used to characterize the hygroscopic swelling property. An analytical moisture diffusion solution is proposed to determine the moisture distribution and consequent hygroscopic induced strain as well as stress. By applying Fick's second law of diffusion, the “thermal wetness” analogous technique is applied to solve moisture absorption/desorption models. The analytical expression for total expansion strain due to hygro-thermo-mechanical coupled effect is implemented using finite element software ANSYS. Finite element predictions reveal the significance of contribution of hygroswelling induced effective stress/strain. Reliability analysis and hygro-thermo-mechanical design for a MEMS-based pressure sensor are performed in accordance with JEDEC preconditioning standard JESD22-A120. A series of comprehensive experimental works and parametric studies were conducted in this paper.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132687821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Using STEM with quasi-parallel illumination and an automated peak-finding routine for strain analysis at the nanometre scale 使用STEM与准平行照明和自动峰查找例行应变分析在纳米尺度

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232604

E. Sourty, J. Stanley, Bert Freitag

{"title":"Using STEM with quasi-parallel illumination and an automated peak-finding routine for strain analysis at the nanometre scale","authors":"E. Sourty, J. Stanley, Bert Freitag","doi":"10.1109/IPFA.2009.5232604","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232604","url":null,"abstract":"Strain engineering has become an important tool to allow the semiconductor industry to meet roadmap requirements for device performance in the face of limits to device scaling. In addition, strain and/or lattice distortion through chemistry or mechanical stress, can have significant effect on mechanical, electrical and magnetic properties in a wide range of materials. Therefore, determination of strain in a processed, failed or natural sample will have ramifications in almost all fields of material science and solid state physics. Currently, only transmission electron microscopy (TEM) has proven capable of measuring such buried strains at the required spatial resolutions. This contribution presents an automated methodology to measure strain with high accuracy, high reproducibility, and high spatial resolution yet without the need for elaborate experimental setup or highly trained operator. The methodology is first put in perspective and compared to other available methodologies. Important aspects of the experimental setup are then detailed as well as the specificity of the methodology and used algorithm. Three different cases are described: SiGe multilayer, strained transistor, and indented sapphire and the strain measured discussed.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"318 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122433129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Reliability concern induced by TOW and TIM overlay issue in EEPROM EEPROM中TOW和TIM叠加问题引起的可靠性问题

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232647

Weihai Fan, Shunwang Chiang, Stephen Xie, Shaha Hu

引用次数: 0

Acting capability of flux for Pb-free interconnection in electronics assembly 电子装配中无铅互连焊剂的作用性能

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232721

C. Du, Jing Zhao, Yunfei Du, Fang Chen, H. Zhao

引用次数: 0

Influence of cooling on the performance of Silicon solar cells 冷却对硅太阳能电池性能的影响

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232567

Y.F. Wang, W. Wu, P. Li, L. Zhang, Z. Ma

引用次数: 3

The irradiation effect and failure analysis of DC-DC power converter DC-DC功率变换器的辐照效应及失效分析

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232625

Yujuan He, Y. En, Hongwei Luo, Xiaoqi He

引用次数: 5

A high-G silicon carbide vertical capacitive micromachined accelerometer 高g碳化硅垂直电容式微机械加速度计

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232644

Ting-Pin Yang, Guosheng Sun, Y. Zhao, Jin Ning, Xingfang Liu, Lei Wang, Wanshun Zhao, Yiping Zeng, Jinmin Li

引用次数: 1