控制用于各种光电应用的VOx薄膜的生长

Xiaomei Wang, Xiangdong Xu, Zhiming Wu, Yadong Jiang, Shaowei He
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引用次数: 0

摘要

在不同沉积温度下,采用反应直流磁控溅射法制备了氧化钒(VOx)薄膜。系统地研究了VOx薄膜的物理性质和微观结构。结果表明,当沉积温度在200 ~ 390℃范围内变化时,室温下VOx的平方电阻从696 KΩ/sq显著降低到0.122 KΩ/sq。薄膜的应力和光学性能也随沉积温度的变化而变化。由此产生的物理性质的调整归因于VOx的化学状态和结晶度的差异。由于所制备的VOx薄膜具有特殊的光学、电学和力学性能,在各种光电应用中表现出巨大的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Controlling the growth of VOx films for various optoelectronic applications
In this paper, vanadium oxide (VOx) thin films were prepared by reactive DC magnetron sputtering under different deposition temperatures. The physical properties and microstructures of VOx thin films were systematically investigated. Results reveal that when the deposition temperature is varied from 200 °C to 390 °C, the square resistance of VOx at room temperature is decreased significantly from 696 KΩ/sq to 0.122 KΩ/sq. The film stress and optical properties were also observed to be varied with the deposition temperature. The resulting adjustment of physical properties is attributed to the difference in both chemical states and crystallinity of VOx. On the base of the special optical, electrical and mechanical properties, the as-prepared VOx films exhibit great potential in various optoelectronic applications.
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