Applications of scanning near-field photon emission microscopy

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232566

D. Isakov, B. Tan, J. Phang, Y. Yeo, A. Tio, Y. Zhang, T. Geinzer, L. Balk

引用次数: 3

Abstract

In this paper, the application of scanning near-field photon emission microscopy for imaging photon emission sites is demonstrated. Photon emissions generated by a Fin-FET test structure with one metallization layer are imaged with spatial resolution of 50 nm using scattering dialectic probe. The potential applications and limitations of the technique are discussed.

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扫描近场光子发射显微镜的应用

本文论述了扫描近场光子发射显微镜在光子发射点成像中的应用。利用散射辩证法探针对单金属化层Fin-FET测试结构产生的光子发射进行了空间分辨率为50 nm的成像。讨论了该技术的潜在应用和局限性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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