扫描近场光子发射显微镜的应用

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232566

D. Isakov, B. Tan, J. Phang, Y. Yeo, A. Tio, Y. Zhang, T. Geinzer, L. Balk

{"title":"扫描近场光子发射显微镜的应用","authors":"D. Isakov, B. Tan, J. Phang, Y. Yeo, A. Tio, Y. Zhang, T. Geinzer, L. Balk","doi":"10.1109/IPFA.2009.5232566","DOIUrl":null,"url":null,"abstract":"In this paper, the application of scanning near-field photon emission microscopy for imaging photon emission sites is demonstrated. Photon emissions generated by a Fin-FET test structure with one metallization layer are imaged with spatial resolution of 50 nm using scattering dialectic probe. The potential applications and limitations of the technique are discussed.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Applications of scanning near-field photon emission microscopy\",\"authors\":\"D. Isakov, B. Tan, J. Phang, Y. Yeo, A. Tio, Y. Zhang, T. Geinzer, L. Balk\",\"doi\":\"10.1109/IPFA.2009.5232566\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the application of scanning near-field photon emission microscopy for imaging photon emission sites is demonstrated. Photon emissions generated by a Fin-FET test structure with one metallization layer are imaged with spatial resolution of 50 nm using scattering dialectic probe. The potential applications and limitations of the technique are discussed.\",\"PeriodicalId\":210619,\"journal\":{\"name\":\"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2009.5232566\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2009.5232566","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文论述了扫描近场光子发射显微镜在光子发射点成像中的应用。利用散射辩证法探针对单金属化层Fin-FET测试结构产生的光子发射进行了空间分辨率为50 nm的成像。讨论了该技术的潜在应用和局限性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Applications of scanning near-field photon emission microscopy

In this paper, the application of scanning near-field photon emission microscopy for imaging photon emission sites is demonstrated. Photon emissions generated by a Fin-FET test structure with one metallization layer are imaged with spatial resolution of 50 nm using scattering dialectic probe. The potential applications and limitations of the technique are discussed.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

自引率

0.00%

发文量