ni掺杂ZnO薄膜的红外特性

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232578

Jinghua Jiang, D. He, Yongsheng Wang, M. Fu, B. Feng, Changbin Ju, Yu-fan Du

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引用次数: 0

摘要

Ni掺杂ZnO(ZnO:Ni)薄膜作为一种铁磁半导体已经得到了广泛的研究，但对其红外特性的研究却很少。本文介绍了在不同烧结温度下，采用溶胶-凝胶法在石英玻璃上沉积ni掺杂ZnO薄膜的实验。利用x射线衍射(XRD)、扫描电镜(SEM)和傅里叶变换红外光谱(FT-IR)等多种技术研究了不同制备工艺的红外特性和影响。

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Infrared characteristics of ni-doped ZnO thin films

Ni-doped ZnO(ZnO:Ni)thin film had been studied widely as a ferromagnetic semiconductor, but there are far fewer studies on its infrared characteristics. This paper describes experiments in which Ni-doped ZnO thin films were deposited on quartz glass using a sol-gel process with different sintering temperatures. The infrared characteristics and the effects of the different fabrication processes were investigated using various techniques including X-ray diffraction (XRD), SEM and FT-IR.

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2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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