提高NAND闪存持久性能的奇/偶字行失效分析

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232715

Young Sun, Mark Zhang, Jossen Yu, W. Dong, W. Chien

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引用次数: 0

摘要

本文介绍了一种全流失效分析方法。从FA上，我们解决了导致NAND闪存持久性能差的奇/偶字行故障。在去除这一缺陷后，该NAND闪存的续航性能大大提高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Failure analysis of odd/even word-line failure to improve the endurance performance of a NAND Flash

A full-flow failure analysis (FA) was introduced in this paper. From the FA, we resolved odd/ even word-line failure which lead to poor endurance performance of a NAND Flash. After removing this defect, the endurance performance of this NAND Flash is greatly enhanced.

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2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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