微观组织对电迁移寿命分布的影响

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232733

R. L. de Orio, H. Ceric, J. Červenka, S. Selberherr

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引用次数: 0

摘要

本文在数值模拟的基础上分析了铜晶粒尺寸的统计分布对电迁移时间到失效分布的影响。我们应用了一个连续的多物理场电迁移模型，该模型包含了晶界对应力积累的影响。结果表明，颗粒尺寸的对数正态分布导致了失效次数的对数正态分布。晶粒尺寸分布标准差的增大导致电迁移寿命标准差的增大。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The effect of microstructure on the electromigration lifetime distribution

In this work we analyze the influence of the statistical distribution of copper grain sizes on the electromigration time to failure distribution based on numerical simulations. We have applied a continuum multi-physics electromigration model which incorporates the effects of grain boundaries for stress build-up. It is shown that the lognormal distribution of grain sizes causes a lognormal distribution for the times to failure. Moreover, the increase of the standard deviation of the grain size distribution results in an increase of the electromigration lifetimes standard deviation.

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2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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