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2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits最新文献

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A study of combining FIB circuit edit and OBIRCH technology for failure analysis 结合FIB电路编辑和OBIRCH技术进行故障分析的研究
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232588
J. Yan, Xuesen Liu, Mike Liu, YiLing Liu
{"title":"A study of combining FIB circuit edit and OBIRCH technology for failure analysis","authors":"J. Yan, Xuesen Liu, Mike Liu, YiLing Liu","doi":"10.1109/IPFA.2009.5232588","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232588","url":null,"abstract":"This paper discusses combining Focused Ion Beam (FIB) circuit edit with OBIRH technology. FIB can cut or rewire an integrated circuit. OBIRCH can locate failure location. If FIB circuit edit & OBIRCH were applied at the same time, we can locate the failure site and find the root cause of the failure. The paper will share one case of failure analysis and present advanced FIB technology.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114839092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Failure analysis of 200 nm-thick gold interconnects induced by alternating current 交流电流诱导200nm厚金互连的失效分析
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232726
G. P. Zhang, M. Wang, B. Zhang
{"title":"Failure analysis of 200 nm-thick gold interconnects induced by alternating current","authors":"G. P. Zhang, M. Wang, B. Zhang","doi":"10.1109/IPFA.2009.5232726","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232726","url":null,"abstract":"A testing system for evaluation of failure behavior of gold interconnects subjected to alternating current was established. Thermal fatigue in gold lines has been investigated by using alternating currents to generate cyclic temperatures and thermal strains. It is found that the lifetime versus thermal cyclic strain range (Δε) for the 2 µm-wide Au interconnect follows the conventional Coffin-Manson relationship when Δε ≤ 0.47%, while when Δε ≫ 0.47%, the damage behavior of the Au lines is dominated by excessive Joule heating","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128134864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal analysis of ICS based on equivalent thermal resistance and skill language 基于等效热阻和技能语言的ICS热分析
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232590
Bin Zhang, Rong Su, S. Feng, Guangchen Zhang, Chunsheng Guo, Yin Liu, Kaikai Ding
{"title":"Thermal analysis of ICS based on equivalent thermal resistance and skill language","authors":"Bin Zhang, Rong Su, S. Feng, Guangchen Zhang, Chunsheng Guo, Yin Liu, Kaikai Ding","doi":"10.1109/IPFA.2009.5232590","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232590","url":null,"abstract":"The thermal analysis of ICs has been studied in different methods for years. In this paper, a new method to analyze the steady-state temperature distribution of integrated circuit is presented. According to equivalent thermal resistance formula obtaining by an aid tool ANSYS and programming idea, the temperature distribution graph of an analog integrated circuit is obtained. And the result is verified by a complete ANSYS analysis.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125784939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dynamic bias temperature instability of p-channel polycrystalline silicon thin-film transistors p沟道多晶硅薄膜晶体管的动态偏置温度不稳定性
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232678
Ching-Fang Huang, Hung-Chang Sun, P. Kuo, Yen‐Ting Chen, Cheewee Liu, Yuan-Jun Hsu, Jim-Shone Chen
{"title":"Dynamic bias temperature instability of p-channel polycrystalline silicon thin-film transistors","authors":"Ching-Fang Huang, Hung-Chang Sun, P. Kuo, Yen‐Ting Chen, Cheewee Liu, Yuan-Jun Hsu, Jim-Shone Chen","doi":"10.1109/IPFA.2009.5232678","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232678","url":null,"abstract":"The impact ionization that occurred near channel-S/D junctions is responsible for the dynamic bias temperature instability (BTI) of p-channel poly-Si thin-film transistors (TFTs). Impact ionization is induced by lateral electric field when gate voltage switches from inversion or full-depletion to accumulation bias. Drain current increases initially due to shortened effective channel length. As the stress time increases, the grain barrier height increases to reduce the drain current, especially at high temperature. In addition to the transient switches, the plateau portions of the gate pulse have significant impact on the device degradation for large stress amplitudes.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131583316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Three zone-reactive wetting ring structure at interface between lead-free Sn-Ag-Cu solder and Ni pad 无铅Sn-Ag-Cu钎料与Ni焊盘界面的三区反应润湿环结构
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232663
L. Xiaoqing, Lam Tim Fai
{"title":"Three zone-reactive wetting ring structure at interface between lead-free Sn-Ag-Cu solder and Ni pad","authors":"L. Xiaoqing, Lam Tim Fai","doi":"10.1109/IPFA.2009.5232663","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232663","url":null,"abstract":"The wetting behavior of Sn-Ag-Cu solder ball on nickel pad has been studied. SEM and EDX were employed to analyze the solder joint interfacial microstructure. Three zone-reactive wetting ring structure was found at the interface. To further study this kind of structures, Solder ball attachment (SBA) and Surface Mount Technology (SMT) were performed to prepare more samples. Experimental results show that the reactive wetting ring is a characteristic of wetting behavior of Sn-Ag-Cu solder ball on Ni or Cu Pad. It forms in ball attach reflow and sometimes can remain after SMT. A model was proposed to illustrate the three zone structure. Effects of the reactive wetting ring on the joint adhesion quality are discussed in this paper.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130780908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Can a MOSFET survive from multiple breakdowns? 一个MOSFET能在多次故障中存活吗?
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232677
X. Li, C. Tung, K. Pey
{"title":"Can a MOSFET survive from multiple breakdowns?","authors":"X. Li, C. Tung, K. Pey","doi":"10.1109/IPFA.2009.5232677","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232677","url":null,"abstract":"How can a metal-oxide-semiconductor (MOS) transistor suffer from multiple dielectric breakdowns (BD) with severe structural damages (e.g., local melting and metal migration) remain functional? Our results show that the amorphization of Si in the vicinity of the BD forms an effective p-n diode which prevents terminal short from happening when reverse-biased.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133016668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Improvement of performance for higher magnification thermal imaging 提高了高倍率热成像的性能
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232602
Hiroyoshi Suzuki, K. Koshikawa, Takahiko Kuroda, Toshimichi Ishizuka, Fan Pin Gyue, Fang Pei Yuan, Wang Jia Ji
{"title":"Improvement of performance for higher magnification thermal imaging","authors":"Hiroyoshi Suzuki, K. Koshikawa, Takahiko Kuroda, Toshimichi Ishizuka, Fan Pin Gyue, Fang Pei Yuan, Wang Jia Ji","doi":"10.1109/IPFA.2009.5232602","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232602","url":null,"abstract":"We have developed a 30x IR sensitive lens for thermal microscopy making it possible to observe thermal images under high magnification beyond 100x in combination with a solid immersion lens. And we could find that it possible to observe thermal images with high magnification beyond 100x and high resolution as less than 1 µm line and space","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133305980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
The relationship between LED package and reliability LED封装与可靠性的关系
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232642
L. Guoguang, Huang Yun, En Yunfei, Yang Shaohua, Lei Zhifeng
{"title":"The relationship between LED package and reliability","authors":"L. Guoguang, Huang Yun, En Yunfei, Yang Shaohua, Lei Zhifeng","doi":"10.1109/IPFA.2009.5232642","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232642","url":null,"abstract":"Package is a key factor, and affects the reliability of LED. In this paper, the main failure modes and mechanisms that caused by poor package process were investigated through some failure analysis cases, and some improving methods to improve the LED's reliability are put forward.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131676119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Trace routing effects on crosstalk signals in high-density integrated circuits 高密度集成电路中串扰信号的走线路由效应
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232656
Yinchao Chen, Shuhui Yang, Liguo Sun, K. Sun
{"title":"Trace routing effects on crosstalk signals in high-density integrated circuits","authors":"Yinchao Chen, Shuhui Yang, Liguo Sun, K. Sun","doi":"10.1109/IPFA.2009.5232656","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232656","url":null,"abstract":"In this paper, we target to investigate the crosstalk between two adjacent traces by studying the effects of their spacing and orientation. It is found that the trace routing is a critical way to reduce the crosstalk between two traces designed in high-density integrated circuits. Simulation results show that two vertical traces result in the smallest crosstalk and that the crosstalk signals are insensitive to the spacing increment between two parallel traces in the range investigated.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115638629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electromigration characteristics of copper dual damascene interconnects - line length and via number dependence 铜双大马士革互连的电迁移特性——线路长度和通孔数的依赖关系
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232735
Yi-Lung Cheng, B. Wei, Yi-Lung Wang
{"title":"Electromigration characteristics of copper dual damascene interconnects - line length and via number dependence","authors":"Yi-Lung Cheng, B. Wei, Yi-Lung Wang","doi":"10.1109/IPFA.2009.5232735","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232735","url":null,"abstract":"In this paper, we attempt to combine short length and via number effects to study the impact on the electromigration (EM) characteristics of dual damascene Cu lines. The results revealed interesting differences in electromigration behaviours of long and short length Cu lines. Increasing via number resulted in a higher electromigration failure time, but is related to the line length. For multiple-via structures with short Cu length, electromigration lifetime was significantly enhanced due to obvious back-stress effect and single failure mechanism of line depletion. These observed effects are specific to Cu dual-damascene structures and can have great technological implications for electromigration assessment.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124145004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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