Electromigration characteristics of copper dual damascene interconnects - line length and via number dependence

Yi-Lung Cheng, B. Wei, Yi-Lung Wang
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引用次数: 2

Abstract

In this paper, we attempt to combine short length and via number effects to study the impact on the electromigration (EM) characteristics of dual damascene Cu lines. The results revealed interesting differences in electromigration behaviours of long and short length Cu lines. Increasing via number resulted in a higher electromigration failure time, but is related to the line length. For multiple-via structures with short Cu length, electromigration lifetime was significantly enhanced due to obvious back-stress effect and single failure mechanism of line depletion. These observed effects are specific to Cu dual-damascene structures and can have great technological implications for electromigration assessment.
铜双大马士革互连的电迁移特性——线路长度和通孔数的依赖关系
在本文中,我们尝试结合短长度效应和过流数效应来研究双大马士革铜线对电迁移特性的影响。结果揭示了长铜线和短铜线在电迁移行为上的有趣差异。通孔数的增加导致电迁移失效时间的增加,但与线路长度有关。对于短Cu长度的多通孔结构,由于明显的背应力效应和线路损耗的单一失效机制,电迁移寿命显著提高。这些观察到的效应是铜双大马士革结构所特有的,对电迁移评估具有重大的技术意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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