一个MOSFET能在多次故障中存活吗?

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232677

X. Li, C. Tung, K. Pey

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引用次数: 1

摘要

金属氧化物半导体(MOS)晶体管遭受多次介质击穿(BD)和严重的结构损伤(例如，局部熔化和金属迁移)如何保持功能?我们的研究结果表明，硅在BD附近的非晶化形成了一个有效的p-n二极管，防止了反向偏置时终端短路的发生。

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Can a MOSFET survive from multiple breakdowns?

How can a metal-oxide-semiconductor (MOS) transistor suffer from multiple dielectric breakdowns (BD) with severe structural damages (e.g., local melting and metal migration) remain functional? Our results show that the amorphization of Si in the vicinity of the BD forms an effective p-n diode which prevents terminal short from happening when reverse-biased.

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2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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