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2008 5th IEEE International Conference on Group IV Photonics最新文献

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The power conversion efficiency of visible light emitting devices in standard BiCMOS processes 标准BiCMOS工艺中可见发光器件的功率转换效率
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638164
P. Kuindersma, T. Hoang, J. Schmitz, M. Vijayaraghavan, M. Dijkstra, W. van Noort, T. Vanhoucke, William C. Peters, M.C.J.C.M. Kramer
{"title":"The power conversion efficiency of visible light emitting devices in standard BiCMOS processes","authors":"P. Kuindersma, T. Hoang, J. Schmitz, M. Vijayaraghavan, M. Dijkstra, W. van Noort, T. Vanhoucke, William C. Peters, M.C.J.C.M. Kramer","doi":"10.1109/GROUP4.2008.4638164","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638164","url":null,"abstract":"We present experimental and theoretical proof for a single and unique relationship between the breakdown voltage and power efficiency of visible light emitting devices fabricated in standard BiCMOS processes.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"349 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115166939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer 在点蚀锗缓冲层上生长出低螺纹位错密度的锗薄膜
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638124
B. Cheng, H. Xue, D. Hu, G. Han, Y. Zeng, A. Bai, C. Xue, L. Luo, Y. Zuo, Q.M. Wang
{"title":"Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer","authors":"B. Cheng, H. Xue, D. Hu, G. Han, Y. Zeng, A. Bai, C. Xue, L. Luo, Y. Zuo, Q.M. Wang","doi":"10.1109/GROUP4.2008.4638124","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638124","url":null,"abstract":"A Ge layer with a pitting surface can be obtained when the growth temperature is lowered to 290degC. On the low temperature Ge buffer layer with pits, high quality Ge layer was grown at 600degC with a threading dislocation density of ~1times105cm-2. According to channeling and random Rutherford backscattering spectrometry spectra, a chimin value of 10% and 3.9% was found, respectively, at the Ge/Si interface and immediately under the surface peak. The root-mean-square surface roughness of Ge film was 0.33 nm.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127528133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Photovoltaic effect in ultra-thin a-Si/SiO2 multilayered structures 超薄a-Si/SiO2多层结构中的光伏效应
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638210
A. A. Shatveryan, A. Anopchenko, S. M. Hossain, A. Marconi, M. Wang, G. Pucker, P. Bellutti, Lorenzo Pavesi
{"title":"Photovoltaic effect in ultra-thin a-Si/SiO2 multilayered structures","authors":"A. A. Shatveryan, A. Anopchenko, S. M. Hossain, A. Marconi, M. Wang, G. Pucker, P. Bellutti, Lorenzo Pavesi","doi":"10.1109/GROUP4.2008.4638210","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638210","url":null,"abstract":"Photovoltaic and photoconductive properties of ultra-thin a-Si/SiO2 multilayers grown by PECVD and annealed at 1150degC were studied. A quantum yield greater than one is observed due to secondary carrier generation from interface trap states.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127114694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monitoring infrared light using a commercial variable optical attenuator subjected to defect engineering 利用商用可变光衰减器监测红外光，受到缺陷工程的影响
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638105
A. Knights, P. Jessop, D. Bruce, D. Logan, B. Luff, D. Zheng, R. Shafiiha, M. Asghari
{"title":"Monitoring infrared light using a commercial variable optical attenuator subjected to defect engineering","authors":"A. Knights, P. Jessop, D. Bruce, D. Logan, B. Luff, D. Zheng, R. Shafiiha, M. Asghari","doi":"10.1109/GROUP4.2008.4638105","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638105","url":null,"abstract":"The fabrication of silicon-waveguide power monitors via the introduction of defects to commercially produced variable optical attenuators is demonstrated. Devices show an effective quantum efficiency of ~1% for a tapped fraction of signal of 30%.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125017309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hybrid integration of InP lasers with SOI waveguides using thermocompression bonding 利用热压键合技术实现InP激光器与SOI波导的混合集成
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638097
M. Kapulainen, S. Ylinen, T. Aalto, M. Harjanne, K. Solehmainen, J. Ollila, V. Vilokkinen
{"title":"Hybrid integration of InP lasers with SOI waveguides using thermocompression bonding","authors":"M. Kapulainen, S. Ylinen, T. Aalto, M. Harjanne, K. Solehmainen, J. Ollila, V. Vilokkinen","doi":"10.1109/GROUP4.2008.4638097","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638097","url":null,"abstract":"Thermocompression bonding of InP lasers to 4 mum thick SOI waveguides has been demonstrated. Good horizontal alignment is achieved by using active alignment. Excellent passive vertical alignment is reached by using a easily controlled fabrication process.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126474299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
Design of GeSiSn/Ge quantum cascase laser GeSiSn/Ge量子壳激光器的设计
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638170
G. Sun, J. Khurgin, J. Menéndez, R. Soref
{"title":"Design of GeSiSn/Ge quantum cascase laser","authors":"G. Sun, J. Khurgin, J. Menéndez, R. Soref","doi":"10.1109/GROUP4.2008.4638170","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638170","url":null,"abstract":"We design a lattice-matched Ge/Ge<sub>0.76</sub>Si<sub>0.19</sub>Sn<sub>0.05</sub> quantum cascade laser emitting at 49 mum. This particular alloy composition gives a ldquocleanrdquo conduction band offset of 150 meV at L-valleys with all other energy valleys sitting higher in energy.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128212892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
42 GHz waveguide germanium-on-silicon vertical PIN photodetector 42 GHz波导硅上锗垂直PIN光电探测器
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638139
L. Vivien, D. Marris-Morini, J. Mangeney, P. Crozat, E. Cassan, S. Laval, J. Fédéli, J. Damlencourt, Y. Lecunff
{"title":"42 GHz waveguide germanium-on-silicon vertical PIN photodetector","authors":"L. Vivien, D. Marris-Morini, J. Mangeney, P. Crozat, E. Cassan, S. Laval, J. Fédéli, J. Damlencourt, Y. Lecunff","doi":"10.1109/GROUP4.2008.4638139","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638139","url":null,"abstract":"High speed, high responsivity and reliable CMOS compatible photodetectors are key elements for low cost telecommunications systems at 1.55 mum. A 42 GHz germanium on silicon vertical PIN photodetector integrated in SOI waveguide is presented.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129680608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Crosstalk reduction of silicon nanowire AWG with shallow-etched grating arms 浅蚀刻光栅臂硅纳米线AWG串扰抑制研究
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638187
Duk-Jun Kim, Jong-Moo Lee, Jung-ho Song, J. Pyo, Gyungock Kim
{"title":"Crosstalk reduction of silicon nanowire AWG with shallow-etched grating arms","authors":"Duk-Jun Kim, Jong-Moo Lee, Jung-ho Song, J. Pyo, Gyungock Kim","doi":"10.1109/GROUP4.2008.4638187","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638187","url":null,"abstract":"The grating arms composed of silicon nanowires were shallow-etched to reduce the random phase error caused by the core width fluctuation. A fairly improved crosstalk value of 18 dB was achieved in the arrayed-waveguide grating with the on-chip loss of 3 dB.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129911315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Electroluminescence of silicon-rich silicon nitride light-emitting devices 富硅氮化硅发光器件的电致发光
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638117
Dongsheng Li, Jian-Wei Huang, Deren Yang
{"title":"Electroluminescence of silicon-rich silicon nitride light-emitting devices","authors":"Dongsheng Li, Jian-Wei Huang, Deren Yang","doi":"10.1109/GROUP4.2008.4638117","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638117","url":null,"abstract":"Non-stoichiometric silicon nitride films with different excess Si concentrations were deposited by plasma-enhanced chemical vapor deposition (PECVD) under different NH3/SiH4 gas flow ratios. Room-temperature electroluminescence (EL) was observed from the films. And the peak of EL spectra remains at 600 nm, irrespective of the increase of the Si concentrations. It was found that at high electric fields the electrons were injected into the SRSN film via Fowler-Nordheim tunneling and trap assisted tunneling, while at low electric fields the electrons were injected via Poole-Frenkel conduction. The observed EL can be attributed to the relaxation of injected carriers down the lower defect states before recombination due to their longer recombination lifetime.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130907347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Photovoltaic effect in Si/SiOx heterostructures Si/SiOx异质结构中的光伏效应
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638211
R. van Loon, K. Catchpole, A. Polman
{"title":"Photovoltaic effect in Si/SiOx heterostructures","authors":"R. van Loon, K. Catchpole, A. Polman","doi":"10.1109/GROUP4.2008.4638211","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638211","url":null,"abstract":"Si/SiOx heterostructures show a photovoltaic effect when the samples are annealed to form Si quantum dots. Subsequently applying dielectric breakdown increases the short-circuit current by up to an order of magnitude.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132658883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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