标准BiCMOS工艺中可见发光器件的功率转换效率

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638164

P. Kuindersma, T. Hoang, J. Schmitz, M. Vijayaraghavan, M. Dijkstra, W. van Noort, T. Vanhoucke, William C. Peters, M.C.J.C.M. Kramer

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引用次数: 14

摘要

我们在实验和理论上证明了在标准BiCMOS工艺中制造的可见光发射器件的击穿电压和功率效率之间存在单一且独特的关系。

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The power conversion efficiency of visible light emitting devices in standard BiCMOS processes

We present experimental and theoretical proof for a single and unique relationship between the breakdown voltage and power efficiency of visible light emitting devices fabricated in standard BiCMOS processes.

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2008 5th IEEE International Conference on Group IV Photonics

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