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2008 5th IEEE International Conference on Group IV Photonics最新文献

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ePIXfab the silicon photonics platform ePIXfab硅光子学平台
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2013-05-22 DOI: 10.1117/12.2020576
A. Khanna, Y. Drissi, P. Dumon, R. Baets, P. Absil, J. Pozo, D. Lo Cascio, M. Fournier, J. Fédéli, L. Fulbert, L. Zimmermann, B. Tillack, T. Aalto, P. O'Brien, D. Deptuck, J. Xu, D. Gale
{"title":"ePIXfab the silicon photonics platform","authors":"A. Khanna, Y. Drissi, P. Dumon, R. Baets, P. Absil, J. Pozo, D. Lo Cascio, M. Fournier, J. Fédéli, L. Fulbert, L. Zimmermann, B. Tillack, T. Aalto, P. O'Brien, D. Deptuck, J. Xu, D. Gale","doi":"10.1117/12.2020576","DOIUrl":"https://doi.org/10.1117/12.2020576","url":null,"abstract":"ePIXfab-The European Silicon Photonics Support Center continues to provide state-of-the-art silicon photonics solutions to academia and industry for prototyping and research. ePIXfab is a consortium of EU research centers providing diverse expertise in the silicon photonics food chain, from training users in designing silicon photonics chips to fiber pigtailed chips. While ePIXfab provides world-wide users access to advanced silicon photonics it also focuses its attention to expanding the silicon photonics infrastructure through a network of design houses, access partners and industrial collaborations.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114220228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Characteristics of SOI rib waveguide microring and racetrack resonators SOI肋波导微环和赛道谐振器的特性
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638125
Qingzhong Huang, Xi Xiao, Yun-tao Li, Yude Yu, Jinzhong Yu
{"title":"Characteristics of SOI rib waveguide microring and racetrack resonators","authors":"Qingzhong Huang, Xi Xiao, Yun-tao Li, Yude Yu, Jinzhong Yu","doi":"10.1109/GROUP4.2008.4638125","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638125","url":null,"abstract":"Characteristics of microring/racetrack resonators, in submicron SOI rib waveguides, have been investigated. The effects of waveguide dimensions, coupler design, roughness, and oxide cladding are considered. Moreover, guided mode, loss and dispersion of such waveguides are analyzed.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125008194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of Si crystallization evolution on the Er luminescence in superlattices Er:Si /Al2O3 Si晶化演化对Er:Si /Al2O3超晶格中Er发光的影响
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638115
J.Z. Wang, Y. Shi, Z. Shi, Z. Tao, X.L. Zhang, L. Pu, E. Ma, R. Zhang, Y.D. Zheng, F. Lu
{"title":"Influence of Si crystallization evolution on the Er luminescence in superlattices Er:Si /Al2O3","authors":"J.Z. Wang, Y. Shi, Z. Shi, Z. Tao, X.L. Zhang, L. Pu, E. Ma, R. Zhang, Y.D. Zheng, F. Lu","doi":"10.1109/GROUP4.2008.4638115","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638115","url":null,"abstract":"Er:Si/Al2O3 superlattices are fabricated by pulsed laser deposition (PLD) technique. Photoluminescence (PL) and PL excitation spectra measurements are carried out. The annealing temperature dependent PL intensity curves are presented. The influence of Si crystallization on the Er ions luminescence shows that the thinner the Si layer, and the shorter the distance r, the better its sensitizing performance.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"221 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123292349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon integrated nanophotonics for on-chip optical interconnects 用于片上光学互连的硅集成纳米光子学
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638151
Y. Vlasov, W. Green, S. Assefa, J. Van Campenhout, Young-Hee Kim, F. Xia
{"title":"Silicon integrated nanophotonics for on-chip optical interconnects","authors":"Y. Vlasov, W. Green, S. Assefa, J. Van Campenhout, Young-Hee Kim, F. Xia","doi":"10.1109/GROUP4.2008.4638151","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638151","url":null,"abstract":"As multi-core microprocessor architectures continue to evolve as a promising platform for high-performance computing, an additional set of challenges emerges for the global interconnects between distant cores. In particular, the limited throughput and large power consumption of electrical copper interconnects are becoming dominant factors limiting the continued scaling of processor performance. One promising solution is to complement conventional global interconnects with a CMOS-compatible intra-chip optical network, based on silicon-on-insulator (SOI) photonic integrated circuits. We will review recent results on silicon nanophotonic circuits based on SOI photonic wires and photonic crystals. Silicon nanophotonic devices have immense capacity for low-loss, high-bandwidth data transmission, and can confine light within sub-micron dimensions, enabling the design of ultra-compact optical devices for all necessary functions within such optical networks. While the bandwidth and power consumption advantages of SOI optical interconnects are potentially immense, ensuring the performance of chip-scale networks places stringent requirements upon the control of the manufacturing process, and its influence upon the operation of individual optical components. We will present recent work on the design, fabrication, and demonstration of various passive and electrooptic devices required for high speed optical interconnect applications, including high-order WDM optical filters, modulators, and switches.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115081085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Couapled cavities in one-dimensional photonic crystal based on horizontal slot waveguide structure with Si-nc 基于Si-nc水平槽波导结构的一维光子晶体耦合腔
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638197
A. Pitanti, P. Bettotti, E. Rigo, R. Guider, N. Daldosso, J. Fédéli, Lorenzo Pavesi
{"title":"Couapled cavities in one-dimensional photonic crystal based on horizontal slot waveguide structure with Si-nc","authors":"A. Pitanti, P. Bettotti, E. Rigo, R. Guider, N. Daldosso, J. Fédéli, Lorenzo Pavesi","doi":"10.1109/GROUP4.2008.4638197","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638197","url":null,"abstract":"One-dimensional photonic crystal structure is used for a slow light effect in a coupled resonators optical horizontal slot waveguide with Si-nc. We report on design, simulations and preliminary optical transmission characterization around 1.55 mum.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122578159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Green, self-luminescent Tb3+ doped silicon oxy-nitride microdisk on Si chip for biosensor applications 绿色自发光Tb3+掺杂氮氧硅微盘在硅片上的生物传感器应用
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638191
Hoon Jeong, J. Shin, G. Sung
{"title":"Green, self-luminescent Tb3+ doped silicon oxy-nitride microdisk on Si chip for biosensor applications","authors":"Hoon Jeong, J. Shin, G. Sung","doi":"10.1109/GROUP4.2008.4638191","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638191","url":null,"abstract":"We design and fabricate green, self-luminescent Tb-doped SiOxNy microdisks on Si chip for low-cost, all-Si biosensor applications. WGM was obtained via top-pumping and side-PL measurements, and obtained Q-factor was 220.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122599765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monolithic integration of the III/V laser material Ga(NAsP) lattice-matched on (001) Silicon substrate 栅格匹配III/V激光材料Ga(NAsP)在(001)硅衬底上的单片集成
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638101
B. Kunert, I. Nemeth, S. Zinnkann, R. Fritz, G. Lukin, K. Volz, W. Stolz
{"title":"Monolithic integration of the III/V laser material Ga(NAsP) lattice-matched on (001) Silicon substrate","authors":"B. Kunert, I. Nemeth, S. Zinnkann, R. Fritz, G. Lukin, K. Volz, W. Stolz","doi":"10.1109/GROUP4.2008.4638101","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638101","url":null,"abstract":"Multi quantum well (MQW) heterostructures in the GaP-based dilute nitride Ga(NAsP) were pseudomorphically grown on exact oriented (001) Silicon substrates without the formation of misfit dislocations. Efficient room temperature photoluminescence has been observed.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122023236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SiGe/Si quantum cascade structures deposited by low-energy plasma-enhanced CVD 低能等离子体增强CVD沉积SiGe/Si量子级联结构
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638086
G. Isella, G. Matmon, A. Neels, E. Muller, M. Califano, D. Chrastina, H. von Kanel, L. Lever, Z. Ikonić, R. Kelsall, D. Paul
{"title":"SiGe/Si quantum cascade structures deposited by low-energy plasma-enhanced CVD","authors":"G. Isella, G. Matmon, A. Neels, E. Muller, M. Califano, D. Chrastina, H. von Kanel, L. Lever, Z. Ikonić, R. Kelsall, D. Paul","doi":"10.1109/GROUP4.2008.4638086","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638086","url":null,"abstract":"Si0.5Ge0.5/Si quantum cascade structures have been deposited by low-energy plasma-enhanced CVD according to a bound-to-continuum design and characterized by high resolution x-ray diffraction and transmission electron microscopy. Electroluminescence from the active region is peaked around 2.5 THz (~10 meV) and exhibits Stark shift and polarization dependence.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128287675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Lifetime measurements of group V donor Rydberg states in silicon at THz frequencies 太赫兹频率下硅中V族给体里德堡态的寿命测量
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638084
S. Lynch, P. Greenland, N. Q. Vinh, K. Litvinenko, B. Redlich, L. van der Meer, M. Warner, A. Stoneham, G. Aeppli, C. Pidgeon, B. Murdin
{"title":"Lifetime measurements of group V donor Rydberg states in silicon at THz frequencies","authors":"S. Lynch, P. Greenland, N. Q. Vinh, K. Litvinenko, B. Redlich, L. van der Meer, M. Warner, A. Stoneham, G. Aeppli, C. Pidgeon, B. Murdin","doi":"10.1109/GROUP4.2008.4638084","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638084","url":null,"abstract":"We have measured the T1 lifetimes of Rydberg states of phosphorus and arsenic in silicon at THz frequencies using the FELIX pulsed free electron laser. Our results show the dominant decoherence mechanism is lifetime broadening.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123341294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electroluminescence from nanocrystalline-Si/SiO2 multilayers with an electron injection barrier 具有电子注入势垒的纳米晶si /SiO2多层膜的电致发光
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638092
A. Marconi, A. Anopchenko, E. Moser, M. Wang, G. Pucker, P. Bellutti, Lorenzo Pavesi
{"title":"Electroluminescence from nanocrystalline-Si/SiO2 multilayers with an electron injection barrier","authors":"A. Marconi, A. Anopchenko, E. Moser, M. Wang, G. Pucker, P. Bellutti, Lorenzo Pavesi","doi":"10.1109/GROUP4.2008.4638092","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638092","url":null,"abstract":"The effect of an injection barrier placed on top of a nanocrystalline-Si/SiO2 multilayered LED is discussed. Direct and alternating current injection schemes and time resolved electroluminescence are reported.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124309970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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