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2008 5th IEEE International Conference on Group IV Photonics最新文献

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ErxY2−xSiO5 thin film waveguide for high optical gain per length at 1.53 μm ErxY2−xSiO5薄膜波导，高光增益每长度为1.53 μm
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638192
K. Suh, Shinyoung Lee, J. Chang, I. Kim, J. Shin, Hansuek Lee, N. Park
{"title":"ErxY2−xSiO5 thin film waveguide for high optical gain per length at 1.53 μm","authors":"K. Suh, Shinyoung Lee, J. Chang, I. Kim, J. Shin, Hansuek Lee, N. Park","doi":"10.1109/GROUP4.2008.4638192","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638192","url":null,"abstract":"Ridge-type Er<sub>x</sub>Y<sub>2-x</sub>SiO<sub>5</sub> waveguides were fabricated. Amorphous Er<sub>x</sub>Y<sub>2-x</sub>SiO<sub>5</sub> was deposited using reactive ion beam sputter deposition, and crystallized by high-temperature annealing. The inversion level achieved was 0.4, limited by grain-boundary scattering and multimodedness of waveguide.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124355999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced light emission from silicon photonic crystal nanocavity 硅光子晶体纳米腔增强光发射
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638199
M. Fujita, Y. Tanaka, Y. Takahashi, S. Noda
{"title":"Enhanced light emission from silicon photonic crystal nanocavity","authors":"M. Fujita, Y. Tanaka, Y. Takahashi, S. Noda","doi":"10.1109/GROUP4.2008.4638199","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638199","url":null,"abstract":"We study the enhanced light emission from a silicon slab with a photonic crystal nanocavity. We find that phonon accumulation in the tiny space is a key for enhanced light emission in addition to the cavity effect for photons.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128147457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strauctural properties of Si nanocrystals: implications for light emitting devices fabrication 硅纳米晶体的结构特性:对发光器件制造的启示
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638089
A. Irrera, G. Franzò, M. Miritello, R. Lo Savio, S. Boninelli, F. Priolo, F. Iacona, G. Nicotra, C. Bongiorno, C. Spinella, S. Coffa
{"title":"Strauctural properties of Si nanocrystals: implications for light emitting devices fabrication","authors":"A. Irrera, G. Franzò, M. Miritello, R. Lo Savio, S. Boninelli, F. Priolo, F. Iacona, G. Nicotra, C. Bongiorno, C. Spinella, S. Coffa","doi":"10.1109/GROUP4.2008.4638089","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638089","url":null,"abstract":"In this work we investigate and compare the structural and optical properties of silicon-rich silicon oxide layers obtained by different deposition techniques, namely plasma enhanced chemical vapor deposition (PECVD) and RF magnetron sputtering. We demonstrate that, in contrast to what generally believed, properties of films grown by different methods are indeed very different as a result of the agglomeration properties. These data have also great implications on the performances of light emitting MOS devices whose active layer has been prepared by the two different techniques.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134513757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ge on Si p-i-n photodetectors with 40 GHz bandwidth 40 GHz带宽的Ge on Si p-i-n光电探测器
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638140
S. Klinger, W. Vogel, M. Berroth, M. Kaschel, M. Oehme, E. Kasper
{"title":"Ge on Si p-i-n photodetectors with 40 GHz bandwidth","authors":"S. Klinger, W. Vogel, M. Berroth, M. Kaschel, M. Oehme, E. Kasper","doi":"10.1109/GROUP4.2008.4638140","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638140","url":null,"abstract":"Germanium photodiodes grown on a silicon substrate are characterized for various diameters and thicknesses of the active absorption region. High frequency measurements using a vector network analyzer are reported for frequencies up to 45 GHz showing a record bandwidth of 40 GHz.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":" 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133871470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Numerical survey on Bragg reflectors in silicon-on-insulator waveguides 绝缘体上硅波导中Bragg反射器的数值研究
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638174
I. Giuntoni, M. Krause, H. Renner, J. Bruns, A. Gajda, E. Brinkmeyer, K. Petermann
{"title":"Numerical survey on Bragg reflectors in silicon-on-insulator waveguides","authors":"I. Giuntoni, M. Krause, H. Renner, J. Bruns, A. Gajda, E. Brinkmeyer, K. Petermann","doi":"10.1109/GROUP4.2008.4638174","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638174","url":null,"abstract":"We present a numerical survey of wavelength-selective Bragg reflectors in silicon-on-insulator waveguides. By an appropriate choice of grating period, duty cycle, etch depth and grating length, usable gratings can be designed.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130697339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Optical Proximity Communication in packaged SiPhotonics 封装SiPhotonics中的光学近距离通信
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638207
J. Cunningham, Xuezhe Zheng, I. Shubin, R. Ho, J. Lexau, A. Krishnamoorthy, M. Asghari, D. Feng, J. Luff, Hong Liang, C. Kung
{"title":"Optical Proximity Communication in packaged SiPhotonics","authors":"J. Cunningham, Xuezhe Zheng, I. Shubin, R. Ho, J. Lexau, A. Krishnamoorthy, M. Asghari, D. Feng, J. Luff, Hong Liang, C. Kung","doi":"10.1109/GROUP4.2008.4638207","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638207","url":null,"abstract":"We report 10Gb/s optical-proximity-communication with reflecting mirrors micro-machined into Si and co-integrated to low loss SOI waveguides for chip to chip communication using a self-aligned-packaging mechanism with measured 4.0 dB coupling loss.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132174897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
High speed Ge photodetector integrated on silicon-on-insulator operating at very low bias voltage 高速锗光电探测器集成在绝缘体上的硅在非常低的偏置电压下工作
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638132
J. Osmond, G. Isella, D. Chrastina, R. Kaufmann, H. von Kanel
{"title":"High speed Ge photodetector integrated on silicon-on-insulator operating at very low bias voltage","authors":"J. Osmond, G. Isella, D. Chrastina, R. Kaufmann, H. von Kanel","doi":"10.1109/GROUP4.2008.4638132","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638132","url":null,"abstract":"Experimental results of Ge/Si heterojunction photodetectors of 2 GHz bandwidth operating at very low bias voltage and fabricated from epitaxial Ge grown on Si and SOI substrates by low-energy plasma-enhanced CVD are reported.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"86 3-4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131669695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spot-size converters for a two-port single-mode fiber-silicon wire waveguide coupler module 用于双端口单模光纤硅线波导耦合器模块的点尺寸转换器
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638129
H. Yoda, K. Shiraishi, A. Ohshima, T. Ishimura, H. Tsuchiya, C. Tsai
{"title":"Spot-size converters for a two-port single-mode fiber-silicon wire waveguide coupler module","authors":"H. Yoda, K. Shiraishi, A. Ohshima, T. Ishimura, H. Tsuchiya, C. Tsai","doi":"10.1109/GROUP4.2008.4638129","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638129","url":null,"abstract":"The performance of a single-mode fiber-silicon wire waveguide coupler module which utilizes an identical spot-size converter (SSC) at the input and output ports is reported. The structural parameters of the SSCs were designed for compactness and relaxed tolerance to fabrication errors.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122385825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Local infiltration of individual pores with dyes in 2D macroporous silicon photonic crystals 二维大孔硅光子晶体中染料对单个孔的局部浸润
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638156
P. Nolte, D. Pergande, S. Schweizer, R. Wehrspohn, M. Geussy, M. Steinhart, R. Salzer
{"title":"Local infiltration of individual pores with dyes in 2D macroporous silicon photonic crystals","authors":"P. Nolte, D. Pergande, S. Schweizer, R. Wehrspohn, M. Geussy, M. Steinhart, R. Salzer","doi":"10.1109/GROUP4.2008.4638156","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638156","url":null,"abstract":"Photonic crystals (PhC) are promising candidates for novel optical components. Passive devices realized with PhC, e.g. complex waveguides, are widely known. However for many applications active devices are required. One possible way to realize such devices is the functionalization of 2D PhC. This can be done by combining 2D PhC with dyes. We present an experimental technique for the infiltration of individual pores which allows the realization of a broad spectrum of different device designs. For the infiltration of individual pores we use 2D PhC templates made of macroporous silicon, electron beam physical vapor deposition, focused ion beam technique, electrochemical deposition and the wetting assisted templating (WASTE)-process [1]-[3].","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126944178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electro-luminescence from un-doped and doped nanocrystalline Si/SiO2 multilayers 未掺杂和掺杂纳米晶Si/SiO2多层膜的电致发光
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638119
D. Wei, T. Wang, H. Sun, Y. Liu, D.Y. Chen, J. Xu, Z. Ma, K. Chen
{"title":"Electro-luminescence from un-doped and doped nanocrystalline Si/SiO2 multilayers","authors":"D. Wei, T. Wang, H. Sun, Y. Liu, D.Y. Chen, J. Xu, Z. Ma, K. Chen","doi":"10.1109/GROUP4.2008.4638119","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638119","url":null,"abstract":"Electroluminescence devices based on nanocrystalline Si/SiO2 multilayers were fabricated and the luminescence can be observed both from vertical and lateral direction. Moreover, P-doped nanocrystalline Si/SiO2 multilayers were prepared and the improved electro-luminescence characteristics were achieved.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130518512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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