Electro-luminescence from un-doped and doped nanocrystalline Si/SiO2 multilayers

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638119

D. Wei, T. Wang, H. Sun, Y. Liu, D.Y. Chen, J. Xu, Z. Ma, K. Chen

引用次数: 0

Abstract

Electroluminescence devices based on nanocrystalline Si/SiO2 multilayers were fabricated and the luminescence can be observed both from vertical and lateral direction. Moreover, P-doped nanocrystalline Si/SiO2 multilayers were prepared and the improved electro-luminescence characteristics were achieved.

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未掺杂和掺杂纳米晶Si/SiO2多层膜的电致发光

制备了基于纳米晶Si/SiO2多层材料的电致发光器件，该器件可以从垂直方向和横向方向观察到发光。此外，制备了p掺杂的纳米晶Si/SiO2多层膜，并获得了改善的电致发光特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2008 5th IEEE International Conference on Group IV Photonics

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