ErxY2−xSiO5薄膜波导，高光增益每长度为1.53 μm

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638192

K. Suh, Shinyoung Lee, J. Chang, I. Kim, J. Shin, Hansuek Lee, N. Park

{"title":"ErxY2−xSiO5薄膜波导，高光增益每长度为1.53 μm","authors":"K. Suh, Shinyoung Lee, J. Chang, I. Kim, J. Shin, Hansuek Lee, N. Park","doi":"10.1109/GROUP4.2008.4638192","DOIUrl":null,"url":null,"abstract":"Ridge-type ErxY2-xSiO5 waveguides were fabricated. Amorphous ErxY2-xSiO5 was deposited using reactive ion beam sputter deposition, and crystallized by high-temperature annealing. The inversion level achieved was 0.4, limited by grain-boundary scattering and multimodedness of waveguide.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"ErxY2−xSiO5 thin film waveguide for high optical gain per length at 1.53 μm\",\"authors\":\"K. Suh, Shinyoung Lee, J. Chang, I. Kim, J. Shin, Hansuek Lee, N. Park\",\"doi\":\"10.1109/GROUP4.2008.4638192\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ridge-type ErxY2-xSiO5 waveguides were fabricated. Amorphous ErxY2-xSiO5 was deposited using reactive ion beam sputter deposition, and crystallized by high-temperature annealing. The inversion level achieved was 0.4, limited by grain-boundary scattering and multimodedness of waveguide.\",\"PeriodicalId\":210345,\"journal\":{\"name\":\"2008 5th IEEE International Conference on Group IV Photonics\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 5th IEEE International Conference on Group IV Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2008.4638192\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 5th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2008.4638192","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

制备了脊型ErxY2-xSiO5波导。采用反应离子束溅射沉积法制备了ErxY2-xSiO5非晶，并进行了高温退火结晶。受晶界散射和波导多模性的限制，反演水平为0.4。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

ErxY2−xSiO5 thin film waveguide for high optical gain per length at 1.53 μm

Ridge-type Er_xY_2-xSiO₅ waveguides were fabricated. Amorphous Er_xY_2-xSiO₅ was deposited using reactive ion beam sputter deposition, and crystallized by high-temperature annealing. The inversion level achieved was 0.4, limited by grain-boundary scattering and multimodedness of waveguide.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2008 5th IEEE International Conference on Group IV Photonics

自引率

0.00%

发文量