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2008 5th IEEE International Conference on Group IV Photonics最新文献

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Er3+ coupled to Si nanoclusters rib waveguides Er3+与硅纳米簇肋波导的耦合
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638148
A. Pitanti, D. Navarro‐Urrios, R. Guider, N. Daldosso, L. Khomenkova, F. Gourbilleau, C. Oton, W. Loh, R. Rizk, O. Jambois, B. Garrido, Lorenzo Pavesi
{"title":"Er3+ coupled to Si nanoclusters rib waveguides","authors":"A. Pitanti, D. Navarro‐Urrios, R. Guider, N. Daldosso, L. Khomenkova, F. Gourbilleau, C. Oton, W. Loh, R. Rizk, O. Jambois, B. Garrido, Lorenzo Pavesi","doi":"10.1109/GROUP4.2008.4638148","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638148","url":null,"abstract":"Er doped nano-Si system has been optimised in terms of photoluminescence intensity and lifetime. Reduction of carrier absorption losses and increasing of the number of Er ions coupled to Si-nc (around 25%) have been achieved.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"31 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127983253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Luminescence properties of silicon nanocrystals in Al2O3 fabricated at low temperature 低温制备Al2O3硅纳米晶体的发光特性
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638090
R. Walters, R. van Loon, A. Polman, I. Brunets, G. Piccolo, J. Schmitz
{"title":"Luminescence properties of silicon nanocrystals in Al2O3 fabricated at low temperature","authors":"R. Walters, R. van Loon, A. Polman, I. Brunets, G. Piccolo, J. Schmitz","doi":"10.1109/GROUP4.2008.4638090","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638090","url":null,"abstract":"Optically active silicon nanocrystals can be incorporated in alumina (Al2O3) using low-temperature CMOS-compatible processing. Luminescence is tentatively attributed to exciton recombination in silicon nanocrystals and associated oxygen related surface states.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125348998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigation of silicon—germanium metal-oxide-semiconductor field-effect transistors grown by laser-assisted plasma-enhanced chemical vapor deposition 激光辅助等离子体增强化学气相沉积制备硅锗金属氧化物半导体场效应晶体管的研究
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638131
Ching-Ting Lee, Jian-Gang Lin, H. Lee
{"title":"Investigation of silicon—germanium metal-oxide-semiconductor field-effect transistors grown by laser-assisted plasma-enhanced chemical vapor deposition","authors":"Ching-Ting Lee, Jian-Gang Lin, H. Lee","doi":"10.1109/GROUP4.2008.4638131","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638131","url":null,"abstract":"SiGe based metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated, in which the SiGe channel layer was deposited by using laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD) system. The characteristics were compared with the device without laser assistance.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122331482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Towards a Ge-based laser for CMOS applications 面向CMOS应用的ge基激光器
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638081
Jifeng Liu, X. Sun, P. Becla, L. Kimerling, J. Michel
{"title":"Towards a Ge-based laser for CMOS applications","authors":"Jifeng Liu, X. Sun, P. Becla, L. Kimerling, J. Michel","doi":"10.1109/GROUP4.2008.4638081","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638081","url":null,"abstract":"We report experimental observation of direct band gap photoluminescence (PL) and optical bleaching of band-engineered epitaxial Ge-on-Si at room temperature, confirming that this material is a promising candidate for efficient light emitting devices on Si.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126667348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
A hybrid silicon sampled grating DBR tunable laser 混合硅采样光栅DBR可调谐激光器
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638095
M. Sysak, J.O. Anthes, D. Liang, J. Bowers, O. Raday, R. Jones
{"title":"A hybrid silicon sampled grating DBR tunable laser","authors":"M. Sysak, J.O. Anthes, D. Liang, J. Bowers, O. Raday, R. Jones","doi":"10.1109/GROUP4.2008.4638095","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638095","url":null,"abstract":"We present a hybrid silicon sampled grating DBR laser fabricated using quantum well intermixing. The laser utilizes two III-V bandgaps spanning >80 nm. Output power is >2.5 mW with CW lasing to 40degC and tuning >12 nm.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114072476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Measurement of the near infrared absorption of Ge on Si films by differential spectroscopy 用微分光谱法测定锗在硅薄膜上的近红外吸收
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638122
V. Sorianello, A. Perna, L. Colace, G. Assanto, H. Luan, L. Kimerling
{"title":"Measurement of the near infrared absorption of Ge on Si films by differential spectroscopy","authors":"V. Sorianello, A. Perna, L. Colace, G. Assanto, H. Luan, L. Kimerling","doi":"10.1109/GROUP4.2008.4638122","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638122","url":null,"abstract":"Using a differential method on epitaxially grown Ge films on silicon, we measure the near-infrared absorption and its temperature dependence.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"34 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120929325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultralow power silicon microdisk modulators and switches 超低功耗硅微盘调制器和开关
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638077
Michael R. Watts, D. Trotter, R. W. Young, A. Lentine
{"title":"Ultralow power silicon microdisk modulators and switches","authors":"Michael R. Watts, D. Trotter, R. W. Young, A. Lentine","doi":"10.1109/GROUP4.2008.4638077","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638077","url":null,"abstract":"We demonstrate a 4 mum silicon microdisk modulator with a power consumption of 85 fJ/bit. The modulator utilizes a reverse-biased, vertical p-n junction to achieve 10 Gb/s data transmission with 3.5 V drive voltage, BER<10-12, and without signal pre-emphasis. High-speed silicon bandpass switches are constructed from pairs of modulators.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116217718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 185
Recent progress in fast silicon modulators 快速硅调制器的最新进展
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638076
D. Marris-Morini, G. Rasigade, L. Vivien, E. Cassan, S. Laval, P. Rivallin, P. Lyan, J. Fédéli
{"title":"Recent progress in fast silicon modulators","authors":"D. Marris-Morini, G. Rasigade, L. Vivien, E. Cassan, S. Laval, P. Rivallin, P. Lyan, J. Fédéli","doi":"10.1109/GROUP4.2008.4638076","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638076","url":null,"abstract":"Impressive progress have been performed on high speed silicon optical modulators for a few years. An overview of recent works will be reported and new results on a lateral pin diode will be presented.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121715498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Box-like filter response of two-dimensional array of microring resonator fabricated in silicon-on-insulator technology 用绝缘体上硅技术制造的二维微环谐振器阵列的盒状滤波器响应
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638157
L. Tobing, P. Dumon, R. Baets, M. Chin
{"title":"Box-like filter response of two-dimensional array of microring resonator fabricated in silicon-on-insulator technology","authors":"L. Tobing, P. Dumon, R. Baets, M. Chin","doi":"10.1109/GROUP4.2008.4638157","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638157","url":null,"abstract":"We show theoretically and demonstrate experimentally that box-like response can be obtained using 2D arrays of microring resonator. The box-like response is manifested from the complementary photonic bandgap properties of the column and row configurations. The observed sidelobe suppression is ~10 dB, while the usable bandwidth can be as high as 500 to 750 GHz.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121588014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Theoretical and experimental studies of an ultra-compact photonic crystal corner mirror based on silicon-on-insulator 基于绝缘体上硅的超紧凑光子晶体角镜的理论与实验研究
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638152
Jinzhong Yu, Hejun Yu, Yu Zhu, Yude Yu
{"title":"Theoretical and experimental studies of an ultra-compact photonic crystal corner mirror based on silicon-on-insulator","authors":"Jinzhong Yu, Hejun Yu, Yu Zhu, Yude Yu","doi":"10.1109/GROUP4.2008.4638152","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638152","url":null,"abstract":"An ultra-compact silicon-on-insulator based photonic crystal corner mirror is designed and optimized. A sample is then successfully fabricated with extra losses 1.1 plusmn 0.4 dB for transverse-electronic (TE) polarization for wavelength range of 1510-1630 nm.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"2006 17","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132678033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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